STS7NF60L
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STMicroelectronics STS7NF60L

Manufacturer No:
STS7NF60L
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 7.5A 8SO
Delivery:
Payment:
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Product Introduction

Overview

The STS7NF60L is a high-performance N-channel MOSFET produced by STMicroelectronics. This device is part of the STripFET™ II family, known for its advanced single feature size™ strip-based process, which enhances packing density, reduces on-resistance, and improves manufacturing reproducibility. The STS7NF60L is designed to operate at high voltages and currents, making it suitable for a variety of power management applications.

Key Specifications

Parameter Value Unit
Channel Type N-Channel
Maximum Continuous Drain Current 7.5 A A
Maximum Drain Source Voltage 60 V V
Package Type SO-8
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 0.017 Ω @ 10 V, 3.5 A Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1 V @ 250 µA V
Maximum Power Dissipation 2.5 W @ TC = 25°C W
Maximum Gate Source Voltage ±16 V V
Maximum Operating Temperature 150 °C °C
Typical Gate Charge @ Vgs 25 nC @ 4.5 V nC
Forward Diode Voltage 1.2 V V

Key Features

  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Low threshold drive voltage
  • Standard outline for easy automated surface mount assembly
  • High maximum continuous drain current of 7.5 A
  • Maximum drain source voltage of 60 V
  • Low maximum drain source resistance of 0.017 Ω @ 10 V, 3.5 A
  • Enhancement mode operation
  • Maximum power dissipation of 2.5 W @ TC = 25°C

Applications

  • DC Motor Drive
  • DC-DC Converters
  • Battery Management in Nomadic Equipment
  • Power Management in Portable/Desktop PCs

Q & A

  1. What is the maximum continuous drain current of the STS7NF60L MOSFET?

    The maximum continuous drain current is 7.5 A at TC = 25°C.

  2. What is the maximum drain source voltage of the STS7NF60L?

    The maximum drain source voltage is 60 V.

  3. What is the package type of the STS7NF60L MOSFET?

    The package type is SO-8.

  4. What is the typical on-resistance of the STS7NF60L at 10 V and 3.5 A?

    The typical on-resistance is 0.017 Ω at 10 V and 3.5 A.

  5. What is the maximum gate source voltage for the STS7NF60L?

    The maximum gate source voltage is ±16 V.

  6. What are the typical applications of the STS7NF60L MOSFET?

    Typical applications include DC motor drive, DC-DC converters, battery management in nomadic equipment, and power management in portable/desktop PCs.

  7. What is the maximum operating temperature of the STS7NF60L?

    The maximum operating temperature is 150 °C.

  8. What is the maximum power dissipation of the STS7NF60L at TC = 25°C?

    The maximum power dissipation is 2.5 W at TC = 25°C.

  9. What is the typical gate charge of the STS7NF60L at Vgs = 4.5 V?

    The typical gate charge is 25 nC at Vgs = 4.5 V.

  10. What is the forward diode voltage of the STS7NF60L?

    The forward diode voltage is 1.2 V.

  11. What is the thermal resistance junction-to-ambient of the STS7NF60L?

    The thermal resistance junction-to-ambient is typically 38 °C/W and maximum 50 °C/W when mounted on a 1 inch^2 FR-4 board).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:19.5mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number STS7NF60L STS5NF60L
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 19.5mOhm @ 3.5A, 10V 55mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V 17 nC @ 5 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1250 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 2.5W (Tc) 2.5W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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