Overview
The STP55NF06 is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This technology is designed to minimize input capacitance and gate charge, making the device highly suitable for advanced high-efficiency isolated DC-DC converters and other applications requiring low gate charge driving.
The STP55NF06 is available in TO-220, TO-220FP, and D²PAK packages, offering flexibility in design and implementation. It features exceptional dv/dt capability and is 100% avalanche tested, ensuring robust performance under various operating conditions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (ID) at TC = 25 °C | 50 | A |
| Drain Current (ID) at TC = 100 °C | 35 | A |
| Pulse Drain Current (IDM) | 200 | A |
| Total Dissipation at TC = 25 °C | 110 (TO-220, D²PAK), 30 (TO-220FP) | W |
| Static Drain-Source On-Resistance (RDS(on)) | < 0.018 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 2-4 | V |
| Total Gate Charge (Qg) | 44.5 nC | nC |
| Maximum Junction Temperature (Tj) | 175 | °C |
Key Features
- 100% avalanche tested for robustness.
- Exceptional dv/dt capability.
- Low input capacitance and gate charge due to STripFET II process.
- High efficiency suitable for isolated DC-DC converters.
- Available in TO-220, TO-220FP, and D²PAK packages.
- High drain current capability up to 50 A.
- Low on-state resistance (RDS(on)) of less than 0.018 Ω.
Applications
- Switching applications in high-efficiency isolated DC-DC converters.
- Telecom and computer applications requiring low gate charge driving.
- Applications with stringent thermal and electrical performance requirements.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP55NF06?
The maximum drain-source voltage (VDS) is 60 V.
- What are the package options available for the STP55NF06?
The STP55NF06 is available in TO-220, TO-220FP, and D²PAK packages.
- What is the maximum continuous drain current (ID) at 25 °C?
The maximum continuous drain current (ID) at 25 °C is 50 A.
- What is the typical on-state resistance (RDS(on)) of the STP55NF06?
The typical on-state resistance (RDS(on)) is less than 0.018 Ω.
- What is the maximum gate-source voltage (VGS) for the STP55NF06?
The maximum gate-source voltage (VGS) is ±20 V.
- What is the total gate charge (Qg) of the STP55NF06?
The total gate charge (Qg) is 44.5 nC.
- What are the typical applications of the STP55NF06?
Typical applications include switching in high-efficiency isolated DC-DC converters, telecom, and computer applications.
- What is the maximum junction temperature (Tj) for the STP55NF06?
The maximum junction temperature (Tj) is 175 °C.
- What is the significance of the STripFET II process in the STP55NF06?
The STripFET II process minimizes input capacitance and gate charge, enhancing the device's efficiency and performance in high-frequency applications.
- What is the maximum pulse drain current (IDM) for the STP55NF06?
The maximum pulse drain current (IDM) is 200 A.
