STP65NF06
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STMicroelectronics STP65NF06

Manufacturer No:
STP65NF06
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 60A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP65NF06 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, known for its advanced strip-based process technology. This transistor offers high packing density, low on-resistance, and robust avalanche characteristics, making it highly reliable and efficient. The STP65NF06 is available in both DPAK and TO-220 packages, catering to various application needs.

Key Specifications

Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current at TC = 25°C ID 60 A
Continuous Drain Current at TC = 100°C ID 42 A
Pulsed Drain Current IDM 240 A
Total Dissipation at TC = 25°C Ptot 110 W
Thermal Resistance Junction-Case Rthj-case 1.36 °C/W
Static Drain-Source On Resistance RDS(on) 11.5 mΩ mΩ
Gate Threshold Voltage VGS(th) 2-4 V
Maximum Junction Temperature Tj 175 °C

Key Features

  • High Performance: The STP65NF06 features a low on-resistance of 11.5 mΩ at VGS = 10V and ID = 30A, making it suitable for high-power applications.
  • Robust Avalanche Characteristics: 100% avalanche tested, ensuring reliability in demanding environments.
  • High Packing Density: Utilizes STMicroelectronics' unique “single feature size” strip-based process for enhanced performance and manufacturing reproducibility.
  • Low Gate Threshold Voltage: VGS(th) of 2-4 V, facilitating standard level gate drive.
  • ECOPACK® Packages: Available in lead-free packages, compliant with JEDEC Standard JESD97, meeting environmental requirements.

Applications

  • Switching Applications: Ideal for power switching in various electronic systems due to its high current handling and low on-resistance.
  • Power Supplies: Suitable for use in high-power DC-DC converters and power supplies.
  • Motor Control: Can be used in motor drive applications requiring high current and efficiency.
  • Industrial and Automotive Systems: Applicable in industrial automation and automotive systems where high reliability and performance are critical.

Q & A

  1. What is the maximum drain-source voltage of the STP65NF06?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is 60 A.

  3. What is the thermal resistance junction-case for the TO-220 package?

    The thermal resistance junction-case (Rthj-case) is 1.36 °C/W.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is 2-4 V.

  5. Is the STP65NF06 available in lead-free packages?

    Yes, it is available in ECOPACK® lead-free packages.

  6. What is the maximum junction temperature?

    The maximum junction temperature (Tj) is 175 °C.

  7. What is the typical on-resistance at VGS = 10V and ID = 30A?

    The typical on-resistance (RDS(on)) is 11.5 mΩ.

  8. What are the common applications of the STP65NF06?

    Common applications include switching, power supplies, motor control, and industrial/automotive systems.

  9. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 240 A.

  10. What is the total gate charge at VDD = 30V and ID = 60A?

    The total gate charge (Qg) is 54 nC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STD65NF06
STD65NF06
MOSFET N-CH 60V 60A DPAK

Similar Products

Part Number STP65NF06 STP45NF06 STP55NF06 STP60NF06
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 38A (Tc) 50A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 30A, 10V 28mOhm @ 19A, 10V 18mOhm @ 27.5A, 10V 16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V 58 nC @ 10 V 60 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 980 pF @ 25 V 1300 pF @ 25 V 1660 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 110W (Tc) 80W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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