STP60NF06
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STMicroelectronics STP60NF06

Manufacturer No:
STP60NF06
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 60A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP60NF06 is a 60V N-channel STripFET II Power MOSFET produced by STMicroelectronics. This MOSFET is designed using STMicroelectronics' unique STripFET process, which minimizes input capacitance and gate charge. This design makes it highly suitable as a primary switch in advanced high-efficiency isolated DC-DC converters, particularly in telecom and computer applications. It is also ideal for any application requiring low gate charge drive requirements.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 60 V
Gate-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 60 A
Continuous Drain Current (ID) at TC = 100°C 42 A
Pulsed Drain Current (IDM) 240 A
Total Dissipation at TC = 25°C (PTOT) 110 W
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-Ambient (Rthj-a) 62.5 °C/W
Maximum Junction Temperature (Tj) 175 °C
Static Drain-Source On Resistance (RDS(on)) 0.014 - 0.016 Ω
Gate Threshold Voltage (VGS(th)) 2 - 4 V
Total Gate Charge (Qg) 54 - 73 nC
Input Capacitance (Ciss) 1660 pF
Output Capacitance (Coss) 400 pF
Reverse Transfer Capacitance (Crss) 140 pF

Key Features

  • Exceptional dv/dt capability
  • 100% Avalanche tested
  • Application oriented characterization
  • Low input capacitance and gate charge
  • Suitable for high-efficiency isolated DC-DC converters in telecom and computer applications
  • Through-hole mounting in TO-220 package
  • ECOPACK® packages with Lead-free second level interconnect

Applications

  • Advanced high-efficiency isolated DC-DC converters
  • Telecom applications
  • Computer and computer peripherals
  • Industrial applications
  • Communications and networking equipment

Q & A

  1. What is the maximum drain-source voltage of the STP60NF06 MOSFET?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the continuous drain current rating of the STP60NF06 at 25°C?

    The continuous drain current (ID) at 25°C is 60A.

  3. What is the thermal resistance junction-case (Rthj-case) of the STP60NF06?

    The thermal resistance junction-case (Rthj-case) is 1.36°C/W.

  4. What is the maximum junction temperature (Tj) for the STP60NF06?

    The maximum junction temperature (Tj) is 175°C.

  5. What is the static drain-source on resistance (RDS(on)) of the STP60NF06?

    The static drain-source on resistance (RDS(on)) is between 0.014Ω and 0.016Ω.

  6. What are the typical applications of the STP60NF06 MOSFET?

    Typical applications include advanced high-efficiency isolated DC-DC converters, telecom, computer, and industrial applications.

  7. What is the package type and mounting style of the STP60NF06?

    The STP60NF06 comes in a TO-220 package with through-hole mounting.

  8. Is the STP60NF06 100% avalanche tested?

    Yes, the STP60NF06 is 100% avalanche tested.

  9. What is the total gate charge (Qg) of the STP60NF06?

    The total gate charge (Qg) is between 54nC and 73nC.

  10. Does the STP60NF06 come in ECOPACK® packages?

    Yes, the STP60NF06 is available in ECOPACK® packages with Lead-free second level interconnect.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:16mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP60NF06 STP60NF06L STP80NF06 STP65NF06
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Last Time Buy Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc) 80A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V, 5V 10V 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 30A, 10V 14mOhm @ 30A, 10V 8mOhm @ 40A, 10V 14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 1V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 66 nC @ 4.5 V 150 nC @ 10 V 75 nC @ 10 V
Vgs (Max) ±20V ±15V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V 2000 pF @ 25 V 3850 pF @ 25 V 1700 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 110W (Tc) 110W (Tc) 300W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -65°C ~ 175°C (TJ) 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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