Overview
The STP55NF06FP is a high-performance N-channel Power MOSFET developed by STMicroelectronics using their unique STripFET II process. This device is designed to minimize input capacitance and gate charge, making it highly suitable for advanced high-efficiency isolated DC-DC converters and applications requiring low gate charge driving.
Available in the TO-220FP package, this MOSFET offers exceptional dv/dt capability and is 100% avalanche tested, ensuring robust and reliable operation in various switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 60 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Drain Current (continuous) at TC = 25 °C | 50 | A |
| Drain Current (continuous) at TC = 100 °C | 35 | A |
| Drain Current (pulsed) | 200 | A |
| Total Dissipation at TC = 25 °C | 30 | W |
| Derating Factor | 0.20 | W/°C |
| Static Drain-Source On-Resistance (RDS(on)) | < 0.018 Ω | Ω |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
| Storage Temperature (Tstg) | -55 to 175 | °C |
| Max. Operating Junction Temperature (Tj) | 150 | °C |
Key Features
- Developed using STMicroelectronics' unique STripFET II process to minimize input capacitance and gate charge.
- Exceptional dv/dt capability.
- 100% avalanche tested.
- Low on-resistance (RDS(on) < 0.018 Ω).
- High packing density and rugged avalanche characteristics.
- Available in TO-220FP package, suitable for through-hole mounting.
- ECOPACK® compliant packages available, meeting various environmental standards.
Applications
- Advanced high-efficiency isolated DC-DC converters.
- Telecom and computer applications.
- Switching applications requiring low gate charge driving.
- Other high-power switching and power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP55NF06FP?
60 V.
- What is the maximum continuous drain current at 25 °C?
50 A.
- What is the typical on-resistance (RDS(on)) of the STP55NF06FP?
< 0.018 Ω.
- What is the gate threshold voltage (VGS(th)) range?
2 - 4 V.
- What are the thermal resistance values for junction-case and junction-ambient?
Junction-case: 5 °C/W, Junction-ambient: 62.5 °C/W.
- Is the STP55NF06FP 100% avalanche tested?
- What are the storage and operating temperature ranges?
Storage: -55 to 175 °C, Operating: up to 150 °C.
- In which package is the STP55NF06FP available?
TO-220FP package.
- What are some typical applications for the STP55NF06FP?
Advanced high-efficiency isolated DC-DC converters, telecom and computer applications, and other high-power switching systems.
- Is the STP55NF06FP compliant with environmental standards?
