STP55NF06L
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STMicroelectronics STP55NF06L

Manufacturer No:
STP55NF06L
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 55A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The STP55NF06L is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the company's StripFET™ II series, which utilizes a unique 'Single Feature Size™' strip-based process. This technology results in extremely high packing density, low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP55NF06L is available in TO-220, D2PAK, and I2PAK packages, making it versatile for various applications.

Key Specifications

ParameterValueUnit
Drain-source voltage (VDS)60V
Gate-source voltage (VGS)±16V
Drain current (continuous) at TC = 25°C55A
Drain current (continuous) at TC = 100°C39A
Pulse drain current (IDM)220A
Total dissipation at TC = 25°C95W
Derating factor0.63W/°C
Thermal resistance junction-case (Rthj-case)1.58°C/W
Thermal resistance junction-ambient (Rthj-a)62.5°C/W
Maximum lead temperature for soldering300°C
Static drain-source on resistance (RDS(on)) at VGS = 10V, ID = 27.5A<0.018Ω
Gate threshold voltage (VGS(th))1-1.7V

Key Features

  • Exceptional dv/dt capability
  • 100% avalanche tested
  • High packing density for low on-resistance
  • Rugged avalanche characteristics
  • Less critical alignment steps for improved manufacturing reproducibility
  • Low static drain-source on resistance (RDS(on))
  • High forward transconductance
  • Low input, output, and reverse transfer capacitance

Applications

The STP55NF06L is suitable for a variety of switching applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-frequency switching circuits
  • Automotive systems requiring high reliability and performance
  • Industrial control and automation systems

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STP55NF06L?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What are the available package types for the STP55NF06L?
    The STP55NF06L is available in TO-220, D2PAK, and I2PAK packages.
  3. What is the continuous drain current rating at 25°C for the STP55NF06L?
    The continuous drain current rating at 25°C is 55 A.
  4. What is the thermal resistance junction-case (Rthj-case) for the STP55NF06L?
    The thermal resistance junction-case (Rthj-case) is 1.58 °C/W.
  5. What is the gate threshold voltage (VGS(th)) range for the STP55NF06L?
    The gate threshold voltage (VGS(th)) range is 1-1.7 V.
  6. What is the maximum lead temperature for soldering the STP55NF06L?
    The maximum lead temperature for soldering is 300 °C.
  7. What are some of the key features of the STP55NF06L?
    Key features include exceptional dv/dt capability, 100% avalanche tested, high packing density for low on-resistance, and rugged avalanche characteristics.
  8. What are some typical applications for the STP55NF06L?
    Typical applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive systems.
  9. What is the derating factor for the STP55NF06L?
    The derating factor is 0.63 W/°C.
  10. What is the pulse drain current (IDM) rating for the STP55NF06L?
    The pulse drain current (IDM) rating is 220 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 5V
Rds On (Max) @ Id, Vgs:18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:1.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 4.5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):95W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STP55NF06L
STP55NF06L
MOSFET N-CH 60V 55A TO220AB

Similar Products

Part Number STP55NF06L STP55NF06
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 5V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 27.5A, 10V 18mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V 60 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V 1300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 95W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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