STD16NF06T4
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STMicroelectronics STD16NF06T4

Manufacturer No:
STD16NF06T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 16A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD16NF06T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET II™ family, known for its advanced 'Single Feature Size™' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance and robust avalanche characteristics. The device is packaged in a DPAK (TO-252) package, which is lead-free and compliant with ECOPACK® standards for environmental sustainability.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 60 V
VDGR (Drain-Gate Voltage) 60 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current at TC = 25°C) 16 A
ID (Continuous Drain Current at TC = 100°C) 11 A
IDM (Pulsed Drain Current) 64 A
PTOT (Total Dissipation at TC = 25°C) 40 W
RthJC (Thermal Resistance Junction-Case) 3.75 °C/W
RthJA (Thermal Resistance Junction-Ambient) 100 °C/W
TJ (Operating Junction Temperature) -55 to 175 °C
VBR(DSS) (Drain-Source Breakdown Voltage) 60 V
RDS(on) (Static Drain-Source On Resistance) 0.060 - 0.070 Ω

Key Features

  • Typical RDS(on) = 0.060Ω: Low on-resistance for efficient power handling.
  • Exceptional dv/dt Capability: High immunity to voltage spikes and transients.
  • 100% Avalanche Tested: Ensures robustness against avalanche conditions.
  • Application Oriented Characterization: Optimized for various application needs.
  • ECOPACK® Package: Lead-free and environmentally friendly packaging.

Applications

  • Audio Amplifiers: Suitable for high-power audio applications due to its low on-resistance and high current handling.
  • Power Tools: Ideal for power tools requiring high current and voltage handling.
  • Automotive Environment: Robust enough to handle the demanding conditions of automotive applications.

Q & A

  1. What is the maximum drain-source voltage of the STD16NF06T4?

    The maximum drain-source voltage (VDS) is 60V.

  2. What is the typical on-resistance of the STD16NF06T4?

    The typical static drain-source on-resistance (RDS(on)) is 0.060Ω.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 16A.

  4. What is the thermal resistance junction-case of the STD16NF06T4?

    The thermal resistance junction-case (RthJC) is 3.75°C/W.

  5. Is the STD16NF06T4 suitable for automotive applications?

    Yes, it is robust enough to handle the demanding conditions of automotive environments.

  6. What type of packaging does the STD16NF06T4 use?

    The device is packaged in a DPAK (TO-252) package, which is lead-free and compliant with ECOPACK® standards.

  7. What are some common applications of the STD16NF06T4?

    Common applications include audio amplifiers, power tools, and automotive environments.

  8. What is the maximum operating junction temperature of the STD16NF06T4?

    The operating junction temperature (TJ) range is -55 to 175°C.

  9. Is the STD16NF06T4 100% avalanche tested?

    Yes, the device is 100% avalanche tested to ensure robustness against avalanche conditions.

  10. What is the maximum pulsed drain current of the STD16NF06T4?

    The maximum pulsed drain current (IDM) is 64A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:70mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14.1 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:400 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD16NF06T4 STD12NF06T4 STD16NF06LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc) 12A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 8A, 10V 100mOhm @ 6A, 10V 70mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14.1 nC @ 10 V 12 nC @ 10 V 7.5 nC @ 5 V
Vgs (Max) ±20V ±20V ±18V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 15 V 315 pF @ 25 V 370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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