STD12NF06T4
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STMicroelectronics STD12NF06T4

Manufacturer No:
STD12NF06T4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12NF06T4 is a high-performance N-channel power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II family, which utilizes a unique 'single feature size' strip-based process to enhance its electrical characteristics. This MOSFET is designed for medium-voltage applications, offering a balance of low on-resistance and high current handling capabilities.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-Resistance)0.08 Ω
ID (Continuous Drain Current)12 A
PD (Power Dissipation)30 W
PackageDPAK, IPAK

Key Features

  • Low on-resistance (RDS(on)) of 0.08 Ω, reducing power losses and improving efficiency.
  • High continuous drain current (ID) of 12 A, suitable for high-current applications.
  • High power dissipation (PD) of 30 W, enabling reliable operation in demanding environments.
  • ESD protection, enhancing the component's robustness against electrostatic discharge.
  • Compact DPAK and IPAK packages, ideal for space-constrained designs.

Applications

The STD12NF06T4 is suitable for a broad range of industrial and automotive applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems such as battery management and power steering.
  • Industrial control systems and automation.

Q & A

  1. What is the maximum drain-source voltage of the STD12NF06T4?
    The maximum drain-source voltage (VDS) is 60 V.
  2. What is the on-resistance of the STD12NF06T4?
    The on-resistance (RDS(on)) is 0.08 Ω.
  3. What is the continuous drain current rating of the STD12NF06T4?
    The continuous drain current (ID) is 12 A.
  4. What is the power dissipation capability of the STD12NF06T4?
    The power dissipation (PD) is 30 W.
  5. In what packages is the STD12NF06T4 available?
    The STD12NF06T4 is available in DPAK and IPAK packages.
  6. Does the STD12NF06T4 have ESD protection?
    Yes, the STD12NF06T4 includes ESD protection.
  7. What are some typical applications for the STD12NF06T4?
    Typical applications include power supplies, motor control systems, automotive systems, and industrial control systems.
  8. Who is the manufacturer of the STD12NF06T4?
    The manufacturer is STMicroelectronics.
  9. What is the STripFET™ II technology used in the STD12NF06T4?
    The STripFET™ II technology is a unique 'single feature size' strip-based process that enhances the electrical characteristics of the MOSFET.
  10. Where can I find detailed specifications for the STD12NF06T4?
    Detailed specifications can be found on the official STMicroelectronics website, as well as on distributor websites like Digi-Key and TME.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD12NF06-1
STD12NF06-1
MOSFET N-CH 60V 12A IPAK

Similar Products

Part Number STD12NF06T4 STD16NF06T4 STD12NF06LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 16A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6A, 10V 70mOhm @ 8A, 10V 100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 14.1 nC @ 10 V 10 nC @ 5 V
Vgs (Max) ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 25 V 400 pF @ 15 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 30W (Tc) 40W (Tc) 42.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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