STD12NF06LT4
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STMicroelectronics STD12NF06LT4

Manufacturer No:
STD12NF06LT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The STD12NF06LT4 is an automotive-grade N-channel power MOSFET produced by STMicroelectronics. This device is part of ST's STripFET II family, featuring an enhanced trench gate structure. It is designed to offer high efficiency and reliability in various power management applications. The MOSFET is packaged in DPAK and IPAK, making it suitable for a wide range of uses.

Key Specifications

ParameterValue
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance0.08 Ω (typ.)
PackageDPAK, IPAK

Key Features

  • Enhanced trench gate structure using ST's STripFET F8 technology
  • Low gate charge driving requirements
  • 800V, Zener-protected, and 100% avalanche tested
  • Ideal for flyback converters and LED lighting applications
  • Suitable for advanced high-efficiency isolated DC-DC converters in telecom and computer applications

Applications

  • Advanced high-efficiency isolated DC-DC converters for telecom and computer applications
  • Flyback converters
  • LED lighting systems
  • Automotive and industrial power management systems

Q & A

  1. What is the drain-source breakdown voltage of the STD12NF06LT4?
    The drain-source breakdown voltage is 60 V.
  2. What is the continuous drain current rating of the STD12NF06LT4?
    The continuous drain current rating is 12 A.
  3. What type of gate structure does the STD12NF06LT4 use?
    The STD12NF06LT4 uses an enhanced trench gate structure with ST's STripFET F8 technology.
  4. Is the STD12NF06LT4 suitable for automotive applications?
    Yes, it is an automotive-grade N-channel power MOSFET.
  5. What are some common applications for the STD12NF06LT4?
    Common applications include flyback converters, LED lighting, and advanced high-efficiency isolated DC-DC converters.
  6. What is the typical drain-source resistance of the STD12NF06LT4?
    The typical drain-source resistance is 0.08 Ω.
  7. Is the STD12NF06LT4 protected against avalanche conditions?
    Yes, it is 100% avalanche tested and Zener-protected.
  8. In what packages is the STD12NF06LT4 available?
    The STD12NF06LT4 is available in DPAK and IPAK packages.
  9. What are the benefits of using the STD12NF06LT4 in power management systems?
    The benefits include high efficiency, low gate charge driving requirements, and enhanced reliability.
  10. Where can I find detailed specifications for the STD12NF06LT4?
    Detailed specifications can be found on STMicroelectronics' official website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
STD12NF06L-1
STD12NF06L-1
MOSFET N-CH 60V 12A IPAK

Similar Products

Part Number STD12NF06LT4 STD12NF06T4 STD16NF06LT4
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc) 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6A, 10V 100mOhm @ 6A, 10V 70mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 12 nC @ 10 V 7.5 nC @ 5 V
Vgs (Max) ±16V ±20V ±18V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 315 pF @ 25 V 370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 42.8W (Tc) 30W (Tc) 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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