STD12NF06L-1
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STMicroelectronics STD12NF06L-1

Manufacturer No:
STD12NF06L-1
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 60V 12A IPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD12NF06L-1 is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET II family, which is known for its advanced technology designed to minimize input capacitance and gate charge. This MOSFET is particularly suited for applications requiring high efficiency and low power losses.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)60 V
RDS(on) (On-State Resistance)0.08 Ω (typ.)
ID (Continuous Drain Current)12 A
PackageIPAK, DPAK
Gate ChargeLow gate charge driving requirements

Key Features

  • High efficiency due to low on-state resistance (RDS(on)) of 0.08 Ω (typ.)
  • Low gate charge, making it suitable for applications with low gate charge driving requirements
  • Advanced STripFET II technology to minimize input capacitance
  • Available in IPAK and DPAK packages

Applications

The STD12NF06L-1 is ideal for use as the primary switch in advanced high-efficiency isolated DC-DC converters. It is particularly suited for telecom and computer applications where high efficiency and low power losses are critical.

Q & A

  1. What is the drain-source voltage rating of the STD12NF06L-1?
    The drain-source voltage rating is 60 V.
  2. What is the typical on-state resistance of the STD12NF06L-1?
    The typical on-state resistance is 0.08 Ω.
  3. What is the continuous drain current rating of the STD12NF06L-1?
    The continuous drain current rating is 12 A.
  4. In which packages is the STD12NF06L-1 available?
    The STD12NF06L-1 is available in IPAK and DPAK packages.
  5. What technology is used in the STD12NF06L-1?
    The STD12NF06L-1 uses STMicroelectronics' STripFET II technology.
  6. Why is the STD12NF06L-1 suitable for telecom and computer applications?
    It is suitable due to its high efficiency and low power losses, making it ideal for isolated DC-DC converters in these applications.
  7. What are the benefits of the low gate charge in the STD12NF06L-1?
    The low gate charge reduces the driving requirements, making it more efficient in various applications.
  8. Where can I find detailed specifications for the STD12NF06L-1?
    Detailed specifications can be found on STMicroelectronics' official website, as well as on distributor websites like Digi-Key, Mouser, and Octopart.
  9. Is the STD12NF06L-1 suitable for high-frequency applications?
    Yes, its low input capacitance and gate charge make it suitable for high-frequency applications.
  10. What is the significance of the STripFET II process in the STD12NF06L-1?
    The STripFET II process is designed to minimize input capacitance and gate charge, enhancing the overall efficiency and performance of the MOSFET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):42.8W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I-PAK
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
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Same Series
STD12NF06L-1
STD12NF06L-1
MOSFET N-CH 60V 12A IPAK

Similar Products

Part Number STD12NF06L-1 STD12NF06-1
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 6A, 10V 100mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 12 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 315 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 42.8W (Tc) 30W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I-PAK I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA TO-251-3 Short Leads, IPak, TO-251AA

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