Overview
The NVR4501NT1G is a single N-channel power MOSFET produced by onsemi. This device is part of the NTR4501N and NVR4501N series, which are known for their leading planar technology, offering low gate charge and fast switching capabilities. The NVR4501NT1G is specifically designed for applications requiring AEC-Q101 qualification and PPAP capability, making it suitable for automotive and other demanding environments. It is packaged in a small SOT-23 footprint, which is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current (TA = 25°C) | ID | 3.2 | A |
| Continuous Drain Current (TA = 85°C) | ID | 2.4 | A |
| Steady State Power Dissipation | PD | 1.25 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 10.0 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| Continuous Source Current (Body Diode) | IS | 1.6 | A |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Ambient Thermal Resistance (Note 1) | RθJA | 100 | °C/W |
| Junction-to-Ambient Thermal Resistance (Note 2) | RθJA | 300 | °C/W |
| Drain-to-Source On Resistance (VGS = 4.5 V, ID = 3.6 A) | RDS(on) | 70-80 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 0.65-1.2 | V |
Key Features
- Leading planar technology for low gate charge and fast switching.
- Rated for low voltage gate drive (2.5 V).
- SOT-23 surface mount package for small footprint.
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free and RoHS compliant.
- Low on-resistance (RDS(on)) of 70-80 mΩ at VGS = 4.5 V and ID = 3.6 A.
- High continuous drain current (3.2 A at TA = 25°C and 2.4 A at TA = 85°C).
Applications
- Load/Power Switch for Portables.
- Load/Power Switch for Computing.
- DC-DC Conversion.
- Automotive applications requiring AEC-Q101 qualification.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVR4501NT1G?
The maximum drain-to-source voltage (VDSS) is 20 V.
- What is the continuous drain current (ID) at TA = 25°C and TA = 85°C?
The continuous drain current is 3.2 A at TA = 25°C and 2.4 A at TA = 85°C.
- What is the typical on-resistance (RDS(on)) at VGS = 4.5 V and ID = 3.6 A?
The typical on-resistance (RDS(on)) is 70-80 mΩ.
- Is the NVR4501NT1G Pb-free and RoHS compliant?
- What are the typical applications of the NVR4501NT1G?
The NVR4501NT1G is typically used in load/power switches for portables and computing, DC-DC conversion, and automotive applications.
- What is the operating junction and storage temperature range of the NVR4501NT1G?
The operating junction and storage temperature range is −55 to +150 °C.
- What is the gate threshold voltage (VGS(TH)) of the NVR4501NT1G?
The gate threshold voltage (VGS(TH)) is between 0.65 and 1.2 V.
- What is the maximum pulsed drain current (IDM) for a pulse width of 10 μs?
The maximum pulsed drain current (IDM) is 10.0 A.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260 °C.
- Is the NVR4501NT1G AEC-Q101 qualified?
