NTR4501NT3G
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onsemi NTR4501NT3G

Manufacturer No:
NTR4501NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NT3G, produced by onsemi, is a single N-channel power MOSFET designed for high-performance applications. This device is part of the NTR4501N series and is packaged in a compact SOT-23 surface mount package. It is known for its leading planar technology, which offers low gate charge and fast switching capabilities. The NTR4501NT3G is rated for low voltage gate drive, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±12 V
Continuous Drain Current (at 25°C) ID 3.2 A
Continuous Drain Current (at 85°C) ID 2.4 A
Steady State Power Dissipation (at 25°C) PD 1.25 W
Pulsed Drain Current IDM 10.0 A
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-to-Source On Resistance (at VGS = 4.5 V, ID = 3.6 A) RDS(on) 70-80
Gate Threshold Voltage VGS(TH) 0.65-1.2 V
Junction-to-Ambient Thermal Resistance (Note 1) RθJA 100 °C/W

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Rated for low voltage gate drive (2.5 V).
  • Compact SOT-23 surface mount package for small footprint.
  • NVR prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.
  • High continuous drain current and steady state power dissipation.
  • Low drain-to-source on resistance.

Applications

  • Load/Power Switch for Portables.
  • Load/Power Switch for Computing.
  • DC-DC Conversion.
  • Automotive applications requiring AEC-Q101 qualification.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4501NT3G?

    The maximum drain-to-source voltage is 20 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 3.2 A at 25°C and 2.4 A at 85°C.

  3. What is the typical drain-to-source on resistance?

    The typical drain-to-source on resistance is 70-80 mΩ at VGS = 4.5 V and ID = 3.6 A.

  4. Is the NTR4501NT3G Pb-free and RoHS compliant?

    Yes, the device is Pb-free and RoHS compliant.

  5. What are the typical applications of the NTR4501NT3G?

    Typical applications include load/power switches for portables and computing, DC-DC conversion, and automotive applications.

  6. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to +150 °C.

  7. What is the junction-to-ambient thermal resistance?

    The junction-to-ambient thermal resistance is 100 °C/W (Note 1).

  8. Is the NTR4501NT3G AEC-Q101 qualified?

    Yes, the NVR prefix indicates that it is AEC-Q101 qualified and PPAP capable.

  9. What is the gate threshold voltage range?

    The gate threshold voltage range is 0.65-1.2 V.

  10. What is the pulsed drain current rating?

    The pulsed drain current rating is 10.0 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.25W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVR4501NT1G
NVR4501NT1G
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3
NTR4501NT3
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3G
NTR4501NT3G
MOSFET N-CH 20V 3.2A SOT23-3

Similar Products

Part Number NTR4501NT3G NTR4501NT3H NTR4503NT3G NTR4501NT1G NTR4501NT3
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Active Obsolete
FET Type N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V - 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) - 1.5A (Ta) 3.2A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - 4.5V, 10V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V - 110mOhm @ 2.5A, 10V 80mOhm @ 3.6A, 4.5V 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA - 3V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V - 7 nC @ 10 V 6 nC @ 4.5 V 6 nC @ 4.5 V
Vgs (Max) ±12V - ±20V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V - 250 pF @ 24 V 200 pF @ 10 V 200 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.25W (Tj) - 420mW (Ta) 1.25W (Tj) 1.25W (Tj)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) - SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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