NTR4501NT1G
  • Share:

onsemi NTR4501NT1G

Manufacturer No:
NTR4501NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NT1G is a power MOSFET produced by onsemi, designed for a variety of applications requiring efficient power switching. This N-Channel MOSFET features a drain-source voltage (VDSS) of 20V and a maximum continuous drain current (ID) of 3.2A at 25°C. It is packaged in a SOT-23-3 (TO-236) surface mount configuration, making it suitable for compact designs. The device is RoHS compliant and Pb-free, ensuring environmental sustainability and regulatory compliance. Introduced in November 2003, this MOSFET has been a reliable choice for many electronic systems due to its robust performance and small footprint.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGS) ±12 V
Continuous Drain Current (ID) at 25°C 3.2 A
Continuous Drain Current (ID) at 85°C 2.4 A
Maximum Power Dissipation (PD) 1.25 W
Maximum Pulse Drain Current (IDM) 10 A
Maximum Junction Temperature (TJ) 150 °C
Minimum Junction Temperature (TJ) -55 °C
Gate Threshold Voltage (VGS(TH)) 0.65 - 1.2 V
Drain-Source On Resistance (RDS(on)) at VGS = 4.5V, ID = 3.6A 70 - 80
Input Capacitance (Ciss) 200 pF
Total Gate Charge (QG(TOT)) 2.4 - 6.0 nC
Package Type SOT-23-3 (TO-236)

Key Features

  • Leading Planar Technology: Offers low gate charge and fast switching capabilities, making it suitable for high-frequency applications.
  • Low Voltage Gate Drive: Rated for 2.5V gate drive, which is beneficial for low-voltage systems.
  • Compact SOT-23 Surface Mount Package: Ideal for designs requiring a small footprint.
  • RoHS Compliant and Pb-Free: Ensures environmental sustainability and regulatory compliance.
  • High Current Capability: Supports up to 3.2A continuous drain current at 25°C.
  • Wide Operating Temperature Range: From -55°C to 150°C, making it versatile for various environmental conditions).

Applications

  • Load/Power Switch for Portables: Suitable for battery-powered devices due to its low power consumption and high efficiency).
  • Load/Power Switch for Computing: Used in computing systems for power management and switching applications).
  • DC-DC Conversion: Ideal for use in DC-DC converters due to its fast switching and low on-resistance characteristics).
  • General Power Switching: Can be used in various power switching applications requiring high current and low voltage drop).

Q & A

  1. What is the maximum drain-source voltage of the NTR4501NT1G?

    The maximum drain-source voltage (VDSS) is 20V).

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 3.2A).

  3. What is the package type of the NTR4501NT1G?

    The package type is SOT-23-3 (TO-236)).

  4. Is the NTR4501NT1G RoHS compliant?

    Yes, the NTR4501NT1G is RoHS compliant and Pb-free).

  5. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(TH)) is between 0.65V and 1.2V).

  6. What are the typical applications of the NTR4501NT1G?

    Typical applications include load/power switches for portables, computing, and DC-DC conversion).

  7. What is the maximum junction temperature?

    The maximum junction temperature (TJ) is 150°C).

  8. What is the maximum power dissipation?

    The maximum power dissipation (PD) is 1.25W).

  9. What is the input capacitance?

    The input capacitance (Ciss) is 200pF).

  10. What is the total gate charge?

    The total gate charge (QG(TOT)) is between 2.4nC and 6.0nC).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.25W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.40
348

Please send RFQ , we will respond immediately.

Same Series
NVR4501NT1G
NVR4501NT1G
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3
NTR4501NT3
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3G
NTR4501NT3G
MOSFET N-CH 20V 3.2A SOT23-3

Similar Products

Part Number NTR4501NT1G NTR4503NT1G NTR4501NT3G NTR4501NST1G NTR4501NT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 1.5A (Ta) 3.2A (Ta) 3.2A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V - -
Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V 110mOhm @ 2.5A, 10V 80mOhm @ 3.6A, 4.5V - 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 3V @ 250µA 1.2V @ 250µA - 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 7 nC @ 10 V 6 nC @ 4.5 V - 6 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V 250 pF @ 24 V 200 pF @ 10 V - 200 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.25W (Tj) 420mW (Ta) 1.25W (Tj) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
MTD6N15T4
MTD6N15T4
onsemi
MOSFET N-CH 150V 6A DPAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
BC547BTAR
BC547BTAR
onsemi
TRANS NPN 45V 0.1A TO92-3
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74HC245ADWR2
MC74HC245ADWR2
onsemi
IC BUS TRANSCVR 3-ST 8B 20SOIC
AMIS30622C6227G
AMIS30622C6227G
onsemi
IC MTR DRV BIPOLR 6.5-29V 20SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5