NTR4501NT1G
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onsemi NTR4501NT1G

Manufacturer No:
NTR4501NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NT1G is a power MOSFET produced by onsemi, designed for a variety of applications requiring efficient power switching. This N-Channel MOSFET features a drain-source voltage (VDSS) of 20V and a maximum continuous drain current (ID) of 3.2A at 25°C. It is packaged in a SOT-23-3 (TO-236) surface mount configuration, making it suitable for compact designs. The device is RoHS compliant and Pb-free, ensuring environmental sustainability and regulatory compliance. Introduced in November 2003, this MOSFET has been a reliable choice for many electronic systems due to its robust performance and small footprint.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDSS) 20 V
Gate-Source Voltage (VGS) ±12 V
Continuous Drain Current (ID) at 25°C 3.2 A
Continuous Drain Current (ID) at 85°C 2.4 A
Maximum Power Dissipation (PD) 1.25 W
Maximum Pulse Drain Current (IDM) 10 A
Maximum Junction Temperature (TJ) 150 °C
Minimum Junction Temperature (TJ) -55 °C
Gate Threshold Voltage (VGS(TH)) 0.65 - 1.2 V
Drain-Source On Resistance (RDS(on)) at VGS = 4.5V, ID = 3.6A 70 - 80
Input Capacitance (Ciss) 200 pF
Total Gate Charge (QG(TOT)) 2.4 - 6.0 nC
Package Type SOT-23-3 (TO-236)

Key Features

  • Leading Planar Technology: Offers low gate charge and fast switching capabilities, making it suitable for high-frequency applications.
  • Low Voltage Gate Drive: Rated for 2.5V gate drive, which is beneficial for low-voltage systems.
  • Compact SOT-23 Surface Mount Package: Ideal for designs requiring a small footprint.
  • RoHS Compliant and Pb-Free: Ensures environmental sustainability and regulatory compliance.
  • High Current Capability: Supports up to 3.2A continuous drain current at 25°C.
  • Wide Operating Temperature Range: From -55°C to 150°C, making it versatile for various environmental conditions).

Applications

  • Load/Power Switch for Portables: Suitable for battery-powered devices due to its low power consumption and high efficiency).
  • Load/Power Switch for Computing: Used in computing systems for power management and switching applications).
  • DC-DC Conversion: Ideal for use in DC-DC converters due to its fast switching and low on-resistance characteristics).
  • General Power Switching: Can be used in various power switching applications requiring high current and low voltage drop).

Q & A

  1. What is the maximum drain-source voltage of the NTR4501NT1G?

    The maximum drain-source voltage (VDSS) is 20V).

  2. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 3.2A).

  3. What is the package type of the NTR4501NT1G?

    The package type is SOT-23-3 (TO-236)).

  4. Is the NTR4501NT1G RoHS compliant?

    Yes, the NTR4501NT1G is RoHS compliant and Pb-free).

  5. What is the typical gate threshold voltage?

    The typical gate threshold voltage (VGS(TH)) is between 0.65V and 1.2V).

  6. What are the typical applications of the NTR4501NT1G?

    Typical applications include load/power switches for portables, computing, and DC-DC conversion).

  7. What is the maximum junction temperature?

    The maximum junction temperature (TJ) is 150°C).

  8. What is the maximum power dissipation?

    The maximum power dissipation (PD) is 1.25W).

  9. What is the input capacitance?

    The input capacitance (Ciss) is 200pF).

  10. What is the total gate charge?

    The total gate charge (QG(TOT)) is between 2.4nC and 6.0nC).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.25W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
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MOSFET N-CH 20V 3.2A SOT23-3
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NTR4501NT3G
NTR4501NT3G
MOSFET N-CH 20V 3.2A SOT23-3

Similar Products

Part Number NTR4501NT1G NTR4503NT1G NTR4501NT3G NTR4501NST1G NTR4501NT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel - N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 1.5A (Ta) 3.2A (Ta) 3.2A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 1.8V, 4.5V - -
Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V 110mOhm @ 2.5A, 10V 80mOhm @ 3.6A, 4.5V - 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 3V @ 250µA 1.2V @ 250µA - 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 7 nC @ 10 V 6 nC @ 4.5 V - 6 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±12V - -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V 250 pF @ 24 V 200 pF @ 10 V - 200 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.25W (Tj) 420mW (Ta) 1.25W (Tj) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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