NTR4501NT1
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onsemi NTR4501NT1

Manufacturer No:
NTR4501NT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 20V 3.2A SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NT1, produced by onsemi, is a single N-Channel power MOSFET designed for high-performance applications. This device is packaged in a compact SOT-23 surface mount package, making it ideal for space-constrained designs. The NTR4501NT1 features leading planar technology, which ensures low gate charge and fast switching capabilities. It is rated for low voltage gate drive, with a typical gate threshold voltage of 0.65 to 1.2 V, and is suitable for a wide range of operating temperatures from -55°C to +150°C.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±12 V
Continuous Drain Current (at 25°C) ID 3.2 A
Continuous Drain Current (at 85°C) ID 2.4 A
Steady State Power Dissipation PD 1.25 W
Pulsed Drain Current IDM 10.0 A
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C
Drain-to-Source On Resistance (at VGS = 4.5 V, ID = 3.6 A) RDS(on) 70 - 80
Gate Threshold Voltage VGS(TH) 0.65 - 1.2 V

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Rated for low voltage gate drive with a typical gate threshold voltage of 0.65 to 1.2 V.
  • Compact SOT-23 surface mount package for small footprint designs.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
  • Pb-free and RoHS compliant.

Applications

  • Load/Power Switch for Portables.
  • Load/Power Switch for Computing.
  • DC-DC Conversion.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4501NT1?

    The maximum drain-to-source voltage is 20 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current rating at 25°C is 3.2 A.

  3. What is the typical on-resistance of the NTR4501NT1 at VGS = 4.5 V and ID = 3.6 A?

    The typical on-resistance is 70 to 80 mΩ.

  4. Is the NTR4501NT1 suitable for automotive applications?
  5. What is the operating junction and storage temperature range of the NTR4501NT1?

    The operating junction and storage temperature range is -55°C to +150°C.

  6. What package type is the NTR4501NT1 available in?

    The NTR4501NT1 is available in a SOT-23 surface mount package.

  7. Is the NTR4501NT1 Pb-free and RoHS compliant?
  8. What are some common applications of the NTR4501NT1?
  9. What is the gate threshold voltage range of the NTR4501NT1?

    The gate threshold voltage range is 0.65 to 1.2 V.

  10. What is the maximum pulsed drain current rating of the NTR4501NT1?

    The maximum pulsed drain current rating is 10.0 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4503NT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 3.2A (Ta) 3.2A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V 80mOhm @ 3.6A, 4.5V 80mOhm @ 3.6A, 4.5V 110mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V 6 nC @ 4.5 V 6 nC @ 4.5 V 7 nC @ 10 V
Vgs (Max) - ±12V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V 200 pF @ 10 V 200 pF @ 10 V 250 pF @ 24 V
FET Feature - - - -
Power Dissipation (Max) - 1.25W (Tj) 1.25W (Tj) 420mW (Ta)
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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