NTR4501NT3
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onsemi NTR4501NT3

Manufacturer No:
NTR4501NT3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NT3 is a single N-channel power MOSFET produced by onsemi, designed for high-performance applications. It features leading planar technology, which ensures low gate charge and fast switching capabilities. This device is packaged in a compact SOT-23 surface mount format, making it ideal for applications where space is limited. The NTR4501NT3 is also available with an NVR prefix, which is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. The device is Pb-free and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±12 V
Continuous Drain Current (TA = 25°C) ID 3.2 A
Continuous Drain Current (TA = 85°C) ID 2.4 A
Steady State Power Dissipation (TA = 25°C) PD 1.25 W
Pulsed Drain Current (tp = 10 μs) IDM 10.0 A
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 3.6 A) RDS(on) 70 - 80
Drain-to-Source On Resistance (VGS = 2.5 V, ID = 3.1 A) RDS(on) 88 - 105

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Rated for low voltage gate drive (2.5 V).
  • Compact SOT-23 surface mount package for small footprint.
  • NVR prefix available for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
  • Pb-free and RoHS compliant.

Applications

  • Load/Power Switch for Portables.
  • Load/Power Switch for Computing.
  • DC-DC Conversion.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4501NT3?

    The maximum drain-to-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 3.2 A at 25°C and 2.4 A at 85°C.

  3. What is the typical drain-to-source on resistance at VGS = 4.5 V and ID = 3.6 A?

    The typical drain-to-source on resistance (RDS(on)) is 70 - 80 mΩ.

  4. Is the NTR4501NT3 Pb-free and RoHS compliant?
  5. What are the common applications of the NTR4501NT3?
  6. What is the operating junction and storage temperature range of the NTR4501NT3?

    The operating junction and storage temperature range is −55 to +150 °C.

  7. What is the pulsed drain current rating for the NTR4501NT3?

    The pulsed drain current (IDM) is 10.0 A for a pulse width of 10 μs.

  8. Is the NTR4501NT3 suitable for automotive applications?
  9. What is the package type of the NTR4501NT3?

    The device is packaged in a SOT-23 surface mount format.

  10. What are the key benefits of the leading planar technology in the NTR4501NT3?

    The leading planar technology provides low gate charge and fast switching capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.25W (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NVR4501NT1G
NVR4501NT1G
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3
NTR4501NT3
MOSFET N-CH 20V 3.2A SOT23-3
NTR4501NT3G
NTR4501NT3G
MOSFET N-CH 20V 3.2A SOT23-3

Similar Products

Part Number NTR4501NT3 NTR4501NT3H NTR4501NT3G NTR4503NT3 NTR4501NT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V - 20 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) - 3.2A (Ta) 1.5A (Ta) 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - 1.8V, 4.5V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 80mOhm @ 3.6A, 4.5V - 80mOhm @ 3.6A, 4.5V 110mOhm @ 2.5A, 10V 80mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA - 1.2V @ 250µA 3V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V - 6 nC @ 4.5 V 7 nC @ 10 V 6 nC @ 4.5 V
Vgs (Max) ±12V - ±12V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 10 V - 200 pF @ 10 V 250 pF @ 24 V 200 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.25W (Tj) - 1.25W (Tj) 420mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) - SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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