NTR4501NST1G
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onsemi NTR4501NST1G

Manufacturer No:
NTR4501NST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 3.2A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4501NST1G, produced by onsemi, is a single N-channel power MOSFET designed for high-performance applications. This device is packaged in a SOT-23 surface mount format, offering a small footprint while maintaining robust electrical characteristics. The NTR4501NST1G is part of onsemi's leading planar technology family, known for low gate charge and fast switching capabilities, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±12 V
Continuous Drain Current (at 25°C) ID 3.2 A
Continuous Drain Current (at 85°C) ID 2.4 A
Steady State Power Dissipation PD 1.25 W
Pulsed Drain Current (tp = 10 μs) IDM 10.0 A
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C
Drain-to-Source On Resistance (at VGS = 4.5 V, ID = 3.6 A) RDS(on) 70 - 80
Gate Threshold Voltage VGS(TH) 0.65 - 1.2 V
Total Gate Charge QG(TOT) 2.4 - 6.0 nC

Key Features

  • Leading planar technology for low gate charge and fast switching.
  • Rated for low voltage gate drive (2.5 V).
  • SOT-23 surface mount package for small footprint.
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
  • Pb-free and RoHS compliant.
  • Low on-resistance (RDS(on)) for efficient power handling.
  • High continuous drain current and pulsed drain current capabilities.

Applications

  • Load/power switch for portable devices.
  • Load/power switch for computing applications.
  • DC-DC conversion.
  • Automotive and industrial power management systems.

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4501NST1G?

    The maximum drain-to-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current rating at 25°C?

    The continuous drain current (ID) at 25°C is 3.2 A.

  3. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is 0.65 to 1.2 V.

  4. Is the NTR4501NST1G Pb-free and RoHS compliant?
  5. What are the typical applications of the NTR4501NST1G?

    The NTR4501NST1G is typically used in load/power switches for portables, computing, DC-DC conversion, and automotive/industrial power management systems.

  6. What is the package type of the NTR4501NST1G?

    The NTR4501NST1G is packaged in a SOT-23 surface mount format.

  7. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is −55 to +150 °C.

  8. What is the total gate charge (QG(TOT))?

    The total gate charge (QG(TOT)) is 2.4 to 6.0 nC.

  9. Is the NTR4501NST1G AEC-Q101 qualified?
  10. What is the on-resistance (RDS(on)) at VGS = 4.5 V and ID = 3.6 A?

    The on-resistance (RDS(on)) at VGS = 4.5 V and ID = 3.6 A is 70 to 80 mΩ.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NTR4501NST1G NTR4501NT1G NTR4503NST1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
FET Type - N-Channel -
Technology - MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) - 20 V -
Current - Continuous Drain (Id) @ 25°C 3.2A (Ta) 3.2A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) - 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs - 80mOhm @ 3.6A, 4.5V -
Vgs(th) (Max) @ Id - 1.2V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs - 6 nC @ 4.5 V -
Vgs (Max) - ±12V -
Input Capacitance (Ciss) (Max) @ Vds - 200 pF @ 10 V -
FET Feature - - -
Power Dissipation (Max) - 1.25W (Tj) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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