Overview
The NTR4503NT1G is a single N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device utilizes leading planar technology to achieve low gate charge and fast switching capabilities. It is packaged in a SOT-23 surface mount format, providing a small footprint of 3 x 3 mm, making it ideal for space-constrained designs. The NTR4503NT1G is also available with an NV prefix, which denotes AEC-Q101 qualification and PPAP capability, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 2.0 A (steady state), 2.5 A (t ≤ 10 s) | A |
| Power Dissipation (TA = 25°C) | PD | 0.73 W (steady state), 0.42 W (minimum recommended pad size) | W |
| Pulsed Drain Current | IDM | 10 A (tp = 10 μs) | A |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 150 °C | °C |
| Source Current (Body Diode) | IS | 2.0 A | A |
| Peak Source Current (Diode Forward) | ISM | 4.0 A (tp = 10 μs) | A |
| Lead Temperature for Soldering Purposes | TL | 260 °C (1/8” from case for 10 s) | °C |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 3.0 V | V |
| Drain-to-Source On-Resistance | RDS(on) | 85 to 140 mΩ (VGS = 4.5 V, ID = 2.0 A), 85 to 110 mΩ (VGS = 10 V, ID = 2.5 A) | mΩ |
| Total Gate Charge | QG(TOT) | 1.9 to 7.0 nC | nC |
Key Features
- Leading planar technology for low gate charge and fast switching.
- 4.5 V rated for low voltage gate drive.
- SOT-23 surface mount package for small footprint (3 x 3 mm).
- NV prefix available for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free and RoHS compliant.
- Low on-state resistance (RDS(on)) of 85 to 140 mΩ at VGS = 4.5 V and ID = 2.0 A.
- Fast switching characteristics with turn-on and turn-off delay times as low as 4.8 ns and 13.6 ns, respectively.
Applications
- DC-DC conversion.
- Load/power switch for portables.
- Load/power switch for computing.
Q & A
- What is the maximum drain-to-source voltage of the NTR4503NT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is 2.0 A at steady state and 2.5 A for pulses less than or equal to 10 seconds.
- What is the maximum gate-to-source voltage?
The maximum gate-to-source voltage (VGS) is ±20 V.
- What is the typical on-state resistance (RDS(on))?
The typical on-state resistance (RDS(on)) is 85 to 140 mΩ at VGS = 4.5 V and ID = 2.0 A, and 85 to 110 mΩ at VGS = 10 V and ID = 2.5 A.
- Is the NTR4503NT1G MOSFET RoHS compliant?
Yes, the NTR4503NT1G is Pb-free and RoHS compliant.
- What are the typical switching times for this MOSFET?
The turn-on delay time (td(on)) is as low as 4.8 ns, and the turn-off delay time (td(off)) is as low as 13.6 ns.
- What is the maximum junction temperature?
The maximum junction temperature (TJ) is 150 °C.
- What are some common applications for the NTR4503NT1G?
Common applications include DC-DC conversion, load/power switches for portables, and load/power switches for computing.
- Is the NTR4503NT1G suitable for automotive applications?
Yes, the NV prefix version of the NTR4503NT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What is the package type of the NTR4503NT1G?
The NTR4503NT1G is packaged in a SOT-23 surface mount format.
