Overview
The NVTR4503NT1G is a single N-Channel power MOSFET produced by onsemi, designed for low voltage gate drive and fast switching applications. This device is part of the NTR4503N series and is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. The MOSFET features a small footprint SOT-23 package, which is Pb-free and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 2.0 A (Steady State), 2.5 A (t ≤ 10 s) | A |
| Power Dissipation (TA = 25°C) | PD | 0.73 W (Steady State), 0.42 W (Note 2) | W |
| Pulsed Drain Current | IDM | 10 A (tp = 10 μs) | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 150 °C | °C |
| Source Current (Body Diode) | IS | 2.0 A | A |
| Peak Source Current (Diode Forward) | ISM | 4.0 A (tp = 10 μs) | A |
| Lead Temperature for Soldering Purposes | TL | 260 °C (1/8” from case for 10 s) | °C |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 3.0 V | V |
| Drain-to-Source On-Resistance | RDS(on) | 85 to 140 mΩ (VGS = 4.5 V, ID = 2.0 A) | mΩ |
| Total Gate Charge | QG(TOT) | 1.9 to 7.0 nC (VGS = 10 V, VDS = 15 V, ID = 2.5 A) | nC |
Key Features
- Leading Planar Technology for low gate charge and fast switching.
- 4.5 V rated for low voltage gate drive.
- SOT-23 surface mount package for small footprint (3 x 3 mm).
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- Pb-free and RoHS compliant.
- Low on-resistance (RDS(on)) of 85 to 140 mΩ at VGS = 4.5 V and ID = 2.0 A.
- Fast switching times with turn-on delay time (td(on)) of 4.8 to 12 ns and turn-off delay time (td(off)) of 13.6 to 25 ns.
Applications
- DC-DC conversion.
- Load/Power switch for portable devices.
- Load/Power switch for computing applications.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVTR4503NT1G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) at TA = 25°C?
The continuous drain current (ID) is 2.0 A in steady state and up to 2.5 A for pulses less than 10 seconds.
- Is the NVTR4503NT1G AEC-Q101 qualified?
- What is the typical on-resistance (RDS(on)) of the NVTR4503NT1G?
The typical on-resistance (RDS(on)) is 85 to 140 mΩ at VGS = 4.5 V and ID = 2.0 A.
- What are the typical switching times for the NVTR4503NT1G?
The turn-on delay time (td(on)) is 4.8 to 12 ns, and the turn-off delay time (td(off)) is 13.6 to 25 ns.
- What is the maximum junction temperature (TJ) for the NVTR4503NT1G?
The maximum junction temperature (TJ) is 150 °C.
- Is the NVTR4503NT1G Pb-free and RoHS compliant?
- What are the common applications of the NVTR4503NT1G?
- What is the package type of the NVTR4503NT1G?
The package type is SOT-23 with a small footprint of 3 x 3 mm.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260 °C (1/8” from case for 10 s).
