Overview
The NTR4003NT1G is a small signal, N-Channel MOSFET produced by onsemi. This device is packaged in a SOT-23 case and is designed for low-power applications. It features a low gate voltage threshold, making it suitable for various drive circuit designs. The MOSFET is also ESD protected and offers excellent thermal performance due to its SOT-23 package. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 0.5 | A |
| Continuous Drain Current (TA = 85°C) | ID | 0.37 | A |
| Power Dissipation (Steady State, TA = 25°C) | PD | 0.69 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 1.7 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 150 | °C |
| Gate Threshold Voltage | VGS(TH) | 0.8 to 1.4 | V |
| Drain-to-Source On Resistance (VGS = 4.0 V, ID = 10 mA) | RDS(on) | 1.0 to 1.5 | Ω |
Key Features
- Low gate voltage threshold (VGS(TH)) to facilitate drive circuit design
- Low gate charge for fast switching
- ESD protected gate
- SOT-23 package providing excellent thermal performance
- Minimum breakdown voltage rating of 30 V
- AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements
- Pb-free and RoHS compliant
Applications
- Notebooks: level shifters, logic switches, low side load switches
- Portable applications
- Automotive and other applications requiring AEC-Q101 qualification
Q & A
- What is the maximum drain-to-source voltage of the NTR4003NT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 0.5 A at 25°C and 0.37 A at 85°C.
- What is the power dissipation of the device in steady state at 25°C?
The power dissipation (PD) is 0.69 W in steady state at 25°C.
- What is the gate threshold voltage range of the NTR4003NT1G?
The gate threshold voltage (VGS(TH)) ranges from 0.8 V to 1.4 V.
- Is the NTR4003NT1G ESD protected?
- What package type is used for the NTR4003NT1G?
The device is packaged in a SOT-23 case.
- Is the NTR4003NT1G Pb-free and RoHS compliant?
- What are some typical applications of the NTR4003NT1G?
Typical applications include notebooks (level shifters, logic switches, low side load switches), portable applications, and automotive applications requiring AEC-Q101 qualification.
- What is the operating junction and storage temperature range of the NTR4003NT1G?
The operating junction and storage temperature range is from −55°C to 150°C.
- What is the typical drain-to-source on resistance at VGS = 4.0 V and ID = 10 mA?
The typical drain-to-source on resistance (RDS(on)) is between 1.0 Ω and 1.5 Ω.
