NTR4003NT3G
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onsemi NTR4003NT3G

Manufacturer No:
NTR4003NT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 500MA SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The NTR4003NT3G is a single N-Channel, small signal MOSFET produced by onsemi. This device is packaged in a SOT-23 case and is designed to offer high performance and reliability in various electronic applications. It features a low gate voltage threshold, making it suitable for drive circuit designs, and it is also ESD protected to enhance durability. The NTR4003NT3G is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 0.5 A
Continuous Drain Current (TA = 85°C) ID 0.37 A
Power Dissipation (Steady State) PD 0.69 W
Pulsed Drain Current (tp = 10 μs) IDM 1.7 A
Operating Junction and Storage Temperature TJ, Tstg -55 to 150 °C
Gate Threshold Voltage VGS(TH) 0.8 - 1.4 V
Drain-to-Source On Resistance (VGS = 4.0 V, ID = 10 mA) RDS(on) 1.0 - 1.5 Ω

Key Features

  • Low Gate Voltage Threshold (VGS(TH)) to facilitate drive circuit design
  • Low Gate Charge for fast switching
  • ESD protected gate for enhanced durability
  • SOT-23 package providing excellent thermal performance
  • Minimum breakdown voltage rating of 30 V
  • AEC-Q101 qualified and PPAP capable for automotive and other critical applications
  • Pb-free and RoHS compliant

Applications

  • Notebooks: Level shifters, logic switches, low side load switches
  • Portable applications
  • Automotive and other applications requiring unique site and control change requirements

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4003NT3G?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 0.5 A at 25°C and 0.37 A at 85°C.

  3. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) ranges from 0.8 V to 1.4 V.

  4. Is the NTR4003NT3G ESD protected?
  5. What is the package type of the NTR4003NT3G?

    The package type is SOT-23.

  6. Is the NTR4003NT3G Pb-free and RoHS compliant?
  7. What are some typical applications of the NTR4003NT3G?

    Typical applications include notebooks, portable applications, and automotive applications.

  8. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55°C to 150°C.

  9. What is the typical drain-to-source on resistance?

    The typical drain-to-source on resistance (RDS(on)) is 1.0 - 1.5 Ω at VGS = 4.0 V and ID = 10 mA.

  10. Is the NTR4003NT3G AEC-Q101 qualified?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.15 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):690mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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Same Series
NTR4003NT3G
NTR4003NT3G
MOSFET N-CH 30V 500MA SOT23-3
NVR4003NT3G
NVR4003NT3G
MOSFET N-CH 30V 500MA SOT23

Similar Products

Part Number NTR4003NT3G NTR4503NT3G NTR4003NT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 500mA (Ta) 1.5A (Ta) 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V 4.5V, 10V 2.5V, 4V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V 110mOhm @ 2.5A, 10V 1.5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.4V @ 250µA 3V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V 7 nC @ 10 V 1.15 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 5 V 250 pF @ 24 V 21 pF @ 5 V
FET Feature - - -
Power Dissipation (Max) 690mW (Ta) 420mW (Ta) 690mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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