NVMFS6H824NT1G
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onsemi NVMFS6H824NT1G

Manufacturer No:
NVMFS6H824NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 19A/103A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVMFS6H824NT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer superior electrical and thermal characteristics, making it suitable for a wide range of power management applications. With its compact DFN5 package (5x6 mm), it is ideal for space-constrained designs while maintaining high efficiency and reliability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 80 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TC = 25°C) ID 103 A
Continuous Drain Current (TC = 100°C) ID 73 A
Power Dissipation (TC = 25°C) PD 115 W
Power Dissipation (TC = 100°C) PD 58 W
Pulsed Drain Current (tp = 10 μs) IDM 626 A
Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C
Source Current (Body Diode) IS 96 A
Single Pulse Drain-to-Source Avalanche Energy EAS 736 mJ
Gate Threshold Voltage VGS(TH) 2.0 - 4.0 V
Drain-to-Source On Resistance (RDS(on)) RDS(on) 3.7 - 4.5
Input Capacitance CISS 2470 pF
Output Capacitance COSS 342 pF
Reverse Transfer Capacitance CRSS 11 pF

Key Features

  • Compact Design: The NVMFS6H824NT1G features a small footprint in a DFN5 package (5x6 mm), making it ideal for space-constrained applications.
  • Low RDS(on): With a low on-resistance of 3.7 - 4.5 mΩ at VGS = 10 V, this MOSFET minimizes conduction losses.
  • Low QG and Capacitance: Low total gate charge (QG(TOT)) and capacitance reduce driver losses and improve switching efficiency.
  • Wettable Flank Option: The NVMFS6H824NWF variant offers wettable flanks for enhanced optical inspection.
  • AEC-Q101 Qualified and PPAP Capable: This device meets automotive standards for reliability and quality.
  • Environmental Compliance: The MOSFET is Pb-free, halide-free, and RoHS compliant.

Applications

  • Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust thermal performance.
  • Power Management: Ideal for power management in industrial, consumer, and computing systems where high efficiency and reliability are crucial.
  • Motor Control: Used in motor control circuits for its high current handling and low on-resistance.
  • Switch-Mode Power Supplies: Applicable in switch-mode power supplies due to its fast switching characteristics and low losses.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NVMFS6H824NT1G?

    The maximum drain-to-source voltage (VDSS) is 80 V.

  2. What is the continuous drain current at 25°C and 100°C?

    The continuous drain current is 103 A at 25°C and 73 A at 100°C.

  3. What is the typical on-resistance (RDS(on)) of this MOSFET?

    The typical on-resistance (RDS(on)) is 3.7 - 4.5 mΩ at VGS = 10 V.

  4. Is the NVMFS6H824NT1G environmentally compliant?

    Yes, it is Pb-free, halide-free, and RoHS compliant.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55°C to +175°C.

  6. What are the key features of the NVMFS6H824NWF variant?

    The NVMFS6H824NWF variant offers wettable flanks for enhanced optical inspection.

  7. Is this MOSFET AEC-Q101 qualified?

    Yes, the NVMFS6H824NT1G is AEC-Q101 qualified and PPAP capable.

  8. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 626 A for a pulse width of 10 μs.

  9. What are the typical applications of this MOSFET?

    Typical applications include automotive systems, power management, motor control, and switch-mode power supplies.

  10. What is the package type of the NVMFS6H824NT1G?

    The package type is DFN5 (5x6 mm).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:19A (Ta), 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2470 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NVMFS6H824NT1G NVMFS6H864NT1G NVMFS6H824NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 103A (Tc) 6.7A (Ta), 21A (Tc) 20A (Ta), 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V 32mOhm @ 5A, 10V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 140µA 4V @ 20µA 2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 6.9 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2470 pF @ 40 V 370 pF @ 40 V 2900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 115W (Tc) 3.5W (Ta), 33W (Tc) 3.8W (Ta), 116W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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