Overview
The NVMFS6H824NT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed to offer superior electrical and thermal characteristics, making it suitable for a wide range of power management applications. With its compact DFN5 package (5x6 mm), it is ideal for space-constrained designs while maintaining high efficiency and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 80 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 103 | A |
| Continuous Drain Current (TC = 100°C) | ID | 73 | A |
| Power Dissipation (TC = 25°C) | PD | 115 | W |
| Power Dissipation (TC = 100°C) | PD | 58 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 626 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | 96 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 736 | mJ |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V |
| Drain-to-Source On Resistance (RDS(on)) | RDS(on) | 3.7 - 4.5 | mΩ |
| Input Capacitance | CISS | 2470 | pF |
| Output Capacitance | COSS | 342 | pF |
| Reverse Transfer Capacitance | CRSS | 11 | pF |
Key Features
- Compact Design: The NVMFS6H824NT1G features a small footprint in a DFN5 package (5x6 mm), making it ideal for space-constrained applications.
- Low RDS(on): With a low on-resistance of 3.7 - 4.5 mΩ at VGS = 10 V, this MOSFET minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge (QG(TOT)) and capacitance reduce driver losses and improve switching efficiency.
- Wettable Flank Option: The NVMFS6H824NWF variant offers wettable flanks for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: This device meets automotive standards for reliability and quality.
- Environmental Compliance: The MOSFET is Pb-free, halide-free, and RoHS compliant.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and robust thermal performance.
- Power Management: Ideal for power management in industrial, consumer, and computing systems where high efficiency and reliability are crucial.
- Motor Control: Used in motor control circuits for its high current handling and low on-resistance.
- Switch-Mode Power Supplies: Applicable in switch-mode power supplies due to its fast switching characteristics and low losses.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS6H824NT1G?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current at 25°C and 100°C?
The continuous drain current is 103 A at 25°C and 73 A at 100°C.
- What is the typical on-resistance (RDS(on)) of this MOSFET?
The typical on-resistance (RDS(on)) is 3.7 - 4.5 mΩ at VGS = 10 V.
- Is the NVMFS6H824NT1G environmentally compliant?
Yes, it is Pb-free, halide-free, and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55°C to +175°C.
- What are the key features of the NVMFS6H824NWF variant?
The NVMFS6H824NWF variant offers wettable flanks for enhanced optical inspection.
- Is this MOSFET AEC-Q101 qualified?
Yes, the NVMFS6H824NT1G is AEC-Q101 qualified and PPAP capable.
- What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is 626 A for a pulse width of 10 μs.
- What are the typical applications of this MOSFET?
Typical applications include automotive systems, power management, motor control, and switch-mode power supplies.
- What is the package type of the NVMFS6H824NT1G?
The package type is DFN5 (5x6 mm).
