NVMFS6H800NT1G
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onsemi NVMFS6H800NT1G

Manufacturer No:
NVMFS6H800NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 28A/203A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NVMFS6H800NT1G is a high-performance, single N-channel MOSFET produced by onsemi. This device is designed to offer superior power handling and efficiency, making it suitable for a wide range of applications that require high current and low on-resistance. The MOSFET features an 80V drain-to-source voltage rating, a maximum current of 203A, and a low on-resistance of 2.1mΩ at 10V and 50A. It is packaged in a SO-8FL (DFN5 5x6, 1.27P) package, which is RoHS compliant.

Key Specifications

ParameterValue
Drain to Source Voltage (Vdss)80 V
Maximum Current (Id)203 A
On-Resistance (Rds(on))2.1 mΩ @ 10 V, 50 A
Gate to Source Voltage (Vgs)±20 V
Gate Charge (Qg)85 nC @ 10 V
Maximum Operating Temperature+175 °C
Power Dissipation (Pd)200 W
Channel ModeEnhancement
QualificationAEC-Q101

Key Features

  • High current capability of up to 203 A.
  • Low on-resistance of 2.1 mΩ at 10 V and 50 A, reducing power losses.
  • High drain-to-source voltage rating of 80 V, suitable for high-voltage applications.
  • Enhancement mode operation for efficient switching.
  • AEC-Q101 qualified, ensuring reliability in automotive and other demanding environments.
  • RoHS compliant SO-8FL (DFN5 5x6, 1.27P) package.

Applications

The NVMFS6H800NT1G MOSFET is versatile and can be used in various applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive power systems, such as battery management, motor control, and power steering.
  • Industrial power supplies: Its high current and low on-resistance make it ideal for high-power industrial applications.
  • Power conversion: Used in DC-DC converters, inverters, and other power conversion circuits where high efficiency and reliability are critical.
  • Motor control: Suitable for motor drive applications requiring high current and low losses.

Q & A

  1. What is the maximum drain-to-source voltage of the NVMFS6H800NT1G MOSFET?
    The maximum drain-to-source voltage is 80 V.
  2. What is the on-resistance of the NVMFS6H800NT1G at 10 V and 50 A?
    The on-resistance is 2.1 mΩ at 10 V and 50 A.
  3. What is the maximum current rating of the NVMFS6H800NT1G?
    The maximum current rating is 203 A.
  4. What is the gate to source voltage range for the NVMFS6H800NT1G?
    The gate to source voltage range is ±20 V.
  5. Is the NVMFS6H800NT1G RoHS compliant?
    Yes, the NVMFS6H800NT1G is RoHS compliant.
  6. What is the maximum operating temperature of the NVMFS6H800NT1G?
    The maximum operating temperature is +175 °C.
  7. What is the power dissipation capability of the NVMFS6H800NT1G?
    The power dissipation capability is 200 W.
  8. Is the NVMFS6H800NT1G qualified for automotive applications?
    Yes, it is AEC-Q101 qualified.
  9. What type of package does the NVMFS6H800NT1G come in?
    The NVMFS6H800NT1G comes in a SO-8FL (DFN5 5x6, 1.27P) package.
  10. What are some common applications for the NVMFS6H800NT1G?
    Common applications include automotive systems, industrial power supplies, power conversion, and motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NVMFS6H800NWFT1G
NVMFS6H800NWFT1G
MOSFET N-CH 80V 28A/203A 5DFN

Similar Products

Part Number NVMFS6H800NT1G NVMFS6H801NT1G NVMFS6H800NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) 23A (Ta), 157A (Tc) 30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 330µA 4V @ 250µA 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 64 nC @ 10 V 112 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5530 pF @ 40 V 4120 pF @ 40 V 6900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 166W (Tc) 3.9W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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