NVMFS6H800NWFT1G
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onsemi NVMFS6H800NWFT1G

Manufacturer No:
NVMFS6H800NWFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 28A/203A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVMFS6H800NWFT1G is a high-performance power MOSFET produced by onsemi. This single N-Channel MOSFET is designed to operate at high voltages and currents, making it suitable for a variety of power management and switching applications. With its robust specifications and reliable performance, it is an excellent choice for automotive and industrial systems that require high power handling capabilities.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 80 V
RDS(ON) (On-Resistance) 2.1
ID (Drain Current) 203 A
TJ (Junction Temperature) -55 to +175 °C
Pd (Power Dissipation) 200 W
Channel Mode Enhancement
Qualification AEC-Q101
Package SO-8FL

Key Features

  • High Voltage and Current Handling: The NVMFS6H800NWFT1G can handle up to 80V and 203A, making it suitable for high-power applications.
  • Low On-Resistance: With an RDS(ON) of 2.1 mΩ, this MOSFET minimizes power losses and enhances efficiency.
  • Wide Operating Temperature Range: The device operates from -55°C to +175°C, ensuring reliability in various environmental conditions.
  • AEC-Q101 Qualified: This qualification ensures the MOSFET meets stringent automotive standards for reliability and performance.
  • Compact SO-8FL Package: The small footprint of the SO-8FL package makes it ideal for space-constrained designs.

Applications

  • Automotive Systems: Suitable for use in automotive power management, including battery management, motor control, and power distribution.
  • Industrial Power Systems: Used in industrial power supplies, motor drives, and other high-power switching applications.
  • Power Supplies and Converters: Ideal for use in DC-DC converters, power factor correction circuits, and other power supply applications.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power handling and switching.

Q & A

  1. What is the maximum drain-source voltage of the NVMFS6H800NWFT1G?

    The maximum drain-source voltage (VDS) is 80V.

  2. What is the on-resistance (RDS(ON)) of this MOSFET?

    The on-resistance (RDS(ON)) is 2.1 mΩ.

  3. What is the maximum drain current (ID) this MOSFET can handle?

    The maximum drain current (ID) is 203A.

  4. What is the operating temperature range of the NVMFS6H800NWFT1G?

    The operating temperature range is from -55°C to +175°C.

  5. Is the NVMFS6H800NWFT1G AEC-Q101 qualified?
  6. What package type is used for the NVMFS6H800NWFT1G?

    The package type is SO-8FL.

  7. What are some common applications for the NVMFS6H800NWFT1G?
  8. What is the maximum power dissipation (Pd) of this MOSFET?

    The maximum power dissipation (Pd) is 200W.

  9. Is the NVMFS6H800NWFT1G suitable for use in life support systems or FDA Class 3 medical devices?
  10. Where can I find detailed specifications and datasheets for the NVMFS6H800NWFT1G?

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

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Same Series
NVMFS6H800NWFT1G
NVMFS6H800NWFT1G
MOSFET N-CH 80V 28A/203A 5DFN

Similar Products

Part Number NVMFS6H800NWFT1G NVMFS6H801NWFT1G NVMFS6H800NLWFT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) 23A (Ta), 157A (Tc) 30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 330µA 4V @ 250µA 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 64 nC @ 10 V 112 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5530 pF @ 40 V 4120 pF @ 40 V 6900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 166W (Tc) 3.9W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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