Overview
The NVMFS6H801NT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. With its compact 5x6 mm DFN5 package, it is ideal for space-constrained designs. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring reliability and compliance with automotive standards. It is also Pb-free and RoHS compliant, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSS) | 80 | V |
| Gate-to-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 157 | A |
| Continuous Drain Current (ID) at TC = 100°C | 111 | A |
| Power Dissipation (PD) at TA = 25°C | 3.8 | W |
| Power Dissipation (PD) at TA = 100°C | 1.9 | W |
| Pulsed Drain Current (IDM) at TA = 25°C, tp = 10 μs | 900 | A |
| Operating Junction and Storage Temperature Range (TJ, Tstg) | −55 to +175 | °C |
| Drain-to-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 50 A | 2.3 - 2.8 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | 2.0 - 4.0 | V |
| Total Gate Charge (QG(TOT)) at VGS = 10 V, VDS = 40 V, ID = 50 A | 64 | nC |
Key Features
- Compact Design: Small footprint in a 5x6 mm DFN5 package, ideal for space-constrained applications.
- Low On-Resistance: Minimizes conduction losses with RDS(on) as low as 2.3 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Wettable Flank Option: Available in a wettable flank version (NVMFS6H801NWFT1G) for enhanced optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Ensures reliability and compliance with automotive standards.
- Pb-Free and RoHS Compliant: Suitable for applications requiring environmental compliance.
Applications
- Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Power Management: Suitable for power management in various electronic systems requiring high current handling and low on-resistance.
- Industrial Control: Used in industrial control systems where reliability and high performance are critical.
- Consumer Electronics: Applicable in consumer electronics where compact design and low power losses are essential.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NVMFS6H801NT1G?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 157 A.
- What is the typical on-resistance (RDS(on)) of the NVMFS6H801NT1G?
The typical on-resistance (RDS(on)) is 2.8 mΩ at VGS = 10 V and ID = 50 A.
- Is the NVMFS6H801NT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range of the NVMFS6H801NT1G?
The operating junction and storage temperature range is −55 to +175 °C.
- What is the total gate charge (QG(TOT)) of the NVMFS6H801NT1G?
The total gate charge (QG(TOT)) is 64 nC at VGS = 10 V, VDS = 40 V, and ID = 50 A.
- Is the NVMFS6H801NT1G AEC-Q101 qualified?
- What is the package type of the NVMFS6H801NT1G?
The package type is DFN5 (5x6 mm).
- What are the key applications of the NVMFS6H801NT1G?
The key applications include automotive systems, power management, industrial control, and consumer electronics.
- Does the NVMFS6H801NT1G have a wettable flank option?
