Overview
The NVHL040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device is part of onsemi's EliteSiC family and is designed for high-performance applications, particularly in the automotive sector. It features a low on-resistance of 40 mΩ and a high voltage rating of 1200 V, making it suitable for demanding power conversion and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 1200 | V |
| Gate-to-Source Voltage | VGS | -15/+25 | V |
| Continuous Drain Current (TC = 25°C) | ID | 60 | A |
| Power Dissipation (RθJC, TC = 25°C) | PD | 348 | W |
| Pulsed Drain Current (TA = 25°C) | IDM | 240 | A |
| Single Pulse Surge Drain Current Capability | IDSC | 416 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 20 V, ID = 35 A, TJ = 25°C) | RDS(on) | 39-56 | mΩ |
| Total Gate Charge (VGS = -5/20 V, VDS = 600 V, ID = 47 A) | QG(tot) | 106 | nC |
| Junction-to-Case Thermal Resistance | RθJC | 0.43 | °C/W |
Key Features
- Typical on-resistance (RDS(on)) of 40 mΩ
- Ultra-low gate charge (typ. QG(tot) = 106 nC)
- Low effective output capacitance (typ. Coss = 140 pF)
- 100% UIL tested
- AEC-Q101 qualified and PPAP capable
- Halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)
Applications
- Automotive On Board Charger
- Automotive DC-DC converter for Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)
Q & A
- What is the maximum drain-to-source voltage of the NVHL040N120SC1?
The maximum drain-to-source voltage is 1200 V. - What is the typical on-resistance of the NVHL040N120SC1?
The typical on-resistance is 40 mΩ. - What is the continuous drain current at 25°C?
The continuous drain current at 25°C is 60 A. - What are the typical applications of the NVHL040N120SC1?
The typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV. - Is the NVHL040N120SC1 AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable. - What is the junction-to-case thermal resistance of the NVHL040N120SC1?
The junction-to-case thermal resistance is 0.43 °C/W. - What is the total gate charge of the NVHL040N120SC1?
The total gate charge is typically 106 nC. - Is the NVHL040N120SC1 RoHS compliant?
Yes, the device is halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection). - What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 348 W. - What is the single pulse surge drain current capability of the NVHL040N120SC1?
The single pulse surge drain current capability is 416 A.
