NVHL080N120SC1
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onsemi NVHL080N120SC1

Manufacturer No:
NVHL080N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 44A TO247-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NVHL080N120SC1 is a Silicon Carbide (SiC) MOSFET produced by onsemi, designed to offer high performance and reliability in various power electronics applications. This N-channel MOSFET features a low on-resistance of 80 mΩ and is rated for 1200 V, making it suitable for high-voltage and high-power applications. The device is packaged in a TO-247-3L case and is AEC-Q101 qualified, ensuring its suitability for automotive and other demanding environments.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS1200V
Gate-to-Source VoltageVGS−15/+25V
Continuous Drain Current (TC = 25°C)ID31A
Power Dissipation (TC = 25°C)PD178W
Pulsed Drain CurrentIDM132A
Operating Junction and Storage Temperature RangeTJ, Tstg−55 to +175°C
Source Current (Body Diode)IS18A
Drain-to-Source On ResistanceRDS(on)80 mΩ (typ.)
Gate Threshold VoltageVGS(th)1.8 to 4.3V
Total Gate ChargeQG(tot)56 nC (typ.)nC
Junction-to-Case Thermal ResistanceRθJC0.84 °C/W°C/W

Key Features

  • Typical on-resistance (RDS(on)) of 80 mΩ
  • Ultra-low gate charge (typ. QG(tot) = 56 nC)
  • Low effective output capacitance (typ. Coss = 80 pF)
  • 100% UIL tested
  • AEC-Q101 qualified and PPAP capable
  • Halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)

Applications

  • Automotive On Board Charger
  • Automotive DC-DC converter for Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)

Q & A

  1. What is the maximum drain-to-source voltage of the NVHL080N120SC1?
    The maximum drain-to-source voltage is 1200 V.
  2. What is the typical on-resistance of the NVHL080N120SC1?
    The typical on-resistance is 80 mΩ.
  3. What is the continuous drain current at 25°C?
    The continuous drain current at 25°C is 31 A.
  4. Is the NVHL080N120SC1 AEC-Q101 qualified?
    Yes, the NVHL080N120SC1 is AEC-Q101 qualified.
  5. What is the junction-to-case thermal resistance?
    The junction-to-case thermal resistance is 0.84 °C/W.
  6. What are the typical applications of the NVHL080N120SC1?
    The typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.
  7. What is the maximum operating junction temperature?
    The maximum operating junction temperature is 175°C.
  8. Is the NVHL080N120SC1 RoHS compliant?
    Yes, the NVHL080N120SC1 is RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection).
  9. What is the total gate charge of the NVHL080N120SC1?
    The total gate charge is typically 56 nC.
  10. What is the package type of the NVHL080N120SC1?
    The package type is TO-247-3L.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):348W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number NVHL080N120SC1 NVHL080N120SC1A NVH4L080N120SC1 NVHL020N120SC1 NVHL040N120SC1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc) 31A (Tc) 29A (Tc) 103A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 20mA 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V 56 nC @ 20 V 56 nC @ 20 V 203 nC @ 20 V 106 nC @ 20 V
Vgs (Max) +25V, -15V +25, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V 1670 pF @ 800 V 1670 pF @ 800 V 2890 pF @ 800 V 1781 pF @ 800 V
FET Feature - - - - -
Power Dissipation (Max) 348W (Tc) 178W (Tc) 170mW (Tc) 535W (Tc) 348W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-4L TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-4 TO-247-3 TO-247-3

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