Overview
The NVHL080N120SC1A is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC family. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance of 80 mΩ and a compact chip size, which ensures low capacitance and gate charge. This results in system benefits such as highest efficiency, faster operation frequency, increased power density, reduced EMI, and a reduced overall system size.
Key Specifications
| Parameter | Value |
|---|---|
| Channel Type | N-Channel |
| Blocking Voltage (BVDSS) | 1200 V |
| Maximum Drain Current (ID(max)) | 44 A |
| Typical ON Resistance (RDS(on)) at 25°C | 80 mΩ (at VGS = 20 V, ID = 20 A) |
| Total Gate Charge (QG(tot)) | 56 nC |
| Output Capacitance (Coss) | 80 pF |
| Junction Temperature (TJ(max)) | 175°C |
| Package Type | TO-247-3L |
| Compliance | Pb-Free, RoHS Compliant |
| Qualification | Qualified for Automotive According to AEC-Q101 |
Key Features
- Ultra-low ON resistance of 80 mΩ
- Ultra-low gate charge (typ. QG(tot) = 56 nC)
- Low effective output capacitance (typ. Coss = 80 pF)
- High-speed switching and low capacitance
- 100% UIL tested
- Pb-Free and RoHS Compliant
- Qualified for automotive applications according to AEC-Q101
Applications
- Power Factor Correction (PFC)
- On-Board Chargers (OBC) for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV)
- Automotive DC/DC converters for EV/PHEV
- Automotive Auxiliary Motor Drives
Q & A
- What is the blocking voltage of the NVHL080N120SC1A MOSFET?
The blocking voltage (BVDSS) is 1200 V.
- What is the typical ON resistance of the NVHL080N120SC1A MOSFET?
The typical ON resistance (RDS(on)) at 25°C is 80 mΩ at VGS = 20 V, ID = 20 A.
- What is the total gate charge of the NVHL080N120SC1A MOSFET?
The total gate charge (QG(tot)) is 56 nC.
- What is the output capacitance of the NVHL080N120SC1A MOSFET?
The output capacitance (Coss) is 80 pF.
- What is the maximum junction temperature of the NVHL080N120SC1A MOSFET?
The maximum junction temperature (TJ(max)) is 175°C.
- In what package is the NVHL080N120SC1A MOSFET available?
The NVHL080N120SC1A MOSFET is available in the TO-247-3L package.
- Is the NVHL080N120SC1A MOSFET qualified for automotive use?
Yes, it is qualified for automotive applications according to AEC-Q101.
- Is the NVHL080N120SC1A MOSFET Pb-Free and RoHS Compliant?
Yes, it is Pb-Free and RoHS Compliant.
- What are some common applications of the NVHL080N120SC1A MOSFET?
Common applications include Power Factor Correction (PFC), On-Board Chargers (OBC) for EV/PHEV, automotive DC/DC converters, and automotive auxiliary motor drives.
- What are the benefits of using Silicon Carbide (SiC) MOSFETs like the NVHL080N120SC1A?
The benefits include higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
