NVHL080N120SC1A
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onsemi NVHL080N120SC1A

Manufacturer No:
NVHL080N120SC1A
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 31A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The NVHL080N120SC1A is a Silicon Carbide (SiC) MOSFET from onsemi, part of their EliteSiC family. This N-Channel MOSFET is designed to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features a low ON resistance of 80 mΩ and a compact chip size, which ensures low capacitance and gate charge. This results in system benefits such as highest efficiency, faster operation frequency, increased power density, reduced EMI, and a reduced overall system size.

Key Specifications

Parameter Value
Channel Type N-Channel
Blocking Voltage (BVDSS) 1200 V
Maximum Drain Current (ID(max)) 44 A
Typical ON Resistance (RDS(on)) at 25°C 80 mΩ (at VGS = 20 V, ID = 20 A)
Total Gate Charge (QG(tot)) 56 nC
Output Capacitance (Coss) 80 pF
Junction Temperature (TJ(max)) 175°C
Package Type TO-247-3L
Compliance Pb-Free, RoHS Compliant
Qualification Qualified for Automotive According to AEC-Q101

Key Features

  • Ultra-low ON resistance of 80 mΩ
  • Ultra-low gate charge (typ. QG(tot) = 56 nC)
  • Low effective output capacitance (typ. Coss = 80 pF)
  • High-speed switching and low capacitance
  • 100% UIL tested
  • Pb-Free and RoHS Compliant
  • Qualified for automotive applications according to AEC-Q101

Applications

  • Power Factor Correction (PFC)
  • On-Board Chargers (OBC) for Electric Vehicles (EV) and Plug-in Hybrid Electric Vehicles (PHEV)
  • Automotive DC/DC converters for EV/PHEV
  • Automotive Auxiliary Motor Drives

Q & A

  1. What is the blocking voltage of the NVHL080N120SC1A MOSFET?

    The blocking voltage (BVDSS) is 1200 V.

  2. What is the typical ON resistance of the NVHL080N120SC1A MOSFET?

    The typical ON resistance (RDS(on)) at 25°C is 80 mΩ at VGS = 20 V, ID = 20 A.

  3. What is the total gate charge of the NVHL080N120SC1A MOSFET?

    The total gate charge (QG(tot)) is 56 nC.

  4. What is the output capacitance of the NVHL080N120SC1A MOSFET?

    The output capacitance (Coss) is 80 pF.

  5. What is the maximum junction temperature of the NVHL080N120SC1A MOSFET?

    The maximum junction temperature (TJ(max)) is 175°C.

  6. In what package is the NVHL080N120SC1A MOSFET available?

    The NVHL080N120SC1A MOSFET is available in the TO-247-3L package.

  7. Is the NVHL080N120SC1A MOSFET qualified for automotive use?

    Yes, it is qualified for automotive applications according to AEC-Q101.

  8. Is the NVHL080N120SC1A MOSFET Pb-Free and RoHS Compliant?

    Yes, it is Pb-Free and RoHS Compliant.

  9. What are some common applications of the NVHL080N120SC1A MOSFET?

    Common applications include Power Factor Correction (PFC), On-Board Chargers (OBC) for EV/PHEV, automotive DC/DC converters, and automotive auxiliary motor drives.

  10. What are the benefits of using Silicon Carbide (SiC) MOSFETs like the NVHL080N120SC1A?

    The benefits include higher efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25, -15V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):178W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number NVHL080N120SC1A NVHL080N120SC1
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA 4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V 56 nC @ 20 V
Vgs (Max) +25, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V 1670 pF @ 800 V
FET Feature - -
Power Dissipation (Max) 178W (Tc) 348W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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