NVHL020N120SC1
  • Share:

onsemi NVHL020N120SC1

Manufacturer No:
NVHL020N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 103A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVHL020N120SC1 is a high-performance Silicon Carbide (SiC) MOSFET produced by onsemi. This N-Channel MOSFET is designed for demanding applications, particularly in the automotive sector. It features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 103 A at 25°C. The device is known for its ultra-low on-resistance (Rds(on)) of 20 mΩ and low gate charge, making it suitable for high-speed switching applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVdss1200V
Continuous Drain Current @ 25°CId103 A (Tc)A
On-Resistance (Max) @ Id, VgsRds(on)28 mΩ @ 60 A, 20 V
Gate Threshold Voltage (Max) @ IdVgs(th)4.3 V @ 20 mAV
Gate Charge (Max) @ VgsQg203 nC @ 20 VnC
Gate-to-Source Voltage (Max)Vgs+25 V, -15 VV
Input Capacitance (Max) @ VdsCiss2890 pF @ 800 VpF
Power Dissipation (Max)Pd535 W (Tc)W
Operating TemperatureTJ-55°C ~ 175°C°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3

Key Features

  • Ultra-low on-resistance (Rds(on)) of 20 mΩ
  • Low gate charge (Qg) of 203 nC @ 20 V
  • High-speed switching capability
  • Low effective output capacitance (Coss) of 260 pF
  • AEC-Q101 qualified and PPAP capable
  • Halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)
  • 100% UIL tested

Applications

  • Automotive On Board Charger
  • Automotive DC-DC converter for Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)

Q & A

  1. What is the drain-to-source voltage of the NVHL020N120SC1? The drain-to-source voltage (Vdss) is 1200 V.
  2. What is the continuous drain current at 25°C for this MOSFET? The continuous drain current (Id) at 25°C is 103 A (Tc).
  3. What is the typical on-resistance of the NVHL020N120SC1? The typical on-resistance (Rds(on)) is 20 mΩ.
  4. What is the gate charge of the NVHL020N120SC1? The gate charge (Qg) is 203 nC @ 20 V.
  5. What are the typical applications of the NVHL020N120SC1? Typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.
  6. Is the NVHL020N120SC1 AEC-Q101 qualified? Yes, the NVHL020N120SC1 is AEC-Q101 qualified and PPAP capable.
  7. What is the operating temperature range of the NVHL020N120SC1? The operating temperature range is -55°C to 175°C (TJ).
  8. What is the package type of the NVHL020N120SC1? The package type is TO-247-3.
  9. Is the NVHL020N120SC1 RoHS compliant? Yes, the NVHL020N120SC1 is RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection).
  10. What is the maximum power dissipation of the NVHL020N120SC1? The maximum power dissipation is 535 W (Tc).

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:203 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):535W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$46.95
22

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0/AA
DD15S20LVL0/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD44S32S0TS/AA
DD44S32S0TS/AA
CONN D-SUB HD RCPT 44P VERT SLDR
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD62M32S50V3S/AA
DD62M32S50V3S/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S5W0X/AA
DD26S2S5W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30/AA
DD26S20WE30/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NVHL020N120SC1 NVHL040N120SC1 NVHL080N120SC1 NVH4L020N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 103A (Tc) 60A (Tc) 44A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 20 V 106 nC @ 20 V 56 nC @ 20 V 220 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 800 V 1781 pF @ 800 V 1670 pF @ 800 V 2943 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 535W (Tc) 348W (Tc) 348W (Tc) 510W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-4L
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-4

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NTD3055L170T4
NTD3055L170T4
onsemi
MOSFET N-CH 60V 9A DPAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD