NVHL020N120SC1
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onsemi NVHL020N120SC1

Manufacturer No:
NVHL020N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 103A TO247-3
Delivery:
Payment:
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Product Introduction

Overview

The NVHL020N120SC1 is a high-performance Silicon Carbide (SiC) MOSFET produced by onsemi. This N-Channel MOSFET is designed for demanding applications, particularly in the automotive sector. It features a drain-to-source voltage (Vdss) of 1200 V and a continuous drain current (Id) of 103 A at 25°C. The device is known for its ultra-low on-resistance (Rds(on)) of 20 mΩ and low gate charge, making it suitable for high-speed switching applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVdss1200V
Continuous Drain Current @ 25°CId103 A (Tc)A
On-Resistance (Max) @ Id, VgsRds(on)28 mΩ @ 60 A, 20 V
Gate Threshold Voltage (Max) @ IdVgs(th)4.3 V @ 20 mAV
Gate Charge (Max) @ VgsQg203 nC @ 20 VnC
Gate-to-Source Voltage (Max)Vgs+25 V, -15 VV
Input Capacitance (Max) @ VdsCiss2890 pF @ 800 VpF
Power Dissipation (Max)Pd535 W (Tc)W
Operating TemperatureTJ-55°C ~ 175°C°C
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3

Key Features

  • Ultra-low on-resistance (Rds(on)) of 20 mΩ
  • Low gate charge (Qg) of 203 nC @ 20 V
  • High-speed switching capability
  • Low effective output capacitance (Coss) of 260 pF
  • AEC-Q101 qualified and PPAP capable
  • Halide-free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection)
  • 100% UIL tested

Applications

  • Automotive On Board Charger
  • Automotive DC-DC converter for Electric Vehicles (EV) and Hybrid Electric Vehicles (HEV)

Q & A

  1. What is the drain-to-source voltage of the NVHL020N120SC1? The drain-to-source voltage (Vdss) is 1200 V.
  2. What is the continuous drain current at 25°C for this MOSFET? The continuous drain current (Id) at 25°C is 103 A (Tc).
  3. What is the typical on-resistance of the NVHL020N120SC1? The typical on-resistance (Rds(on)) is 20 mΩ.
  4. What is the gate charge of the NVHL020N120SC1? The gate charge (Qg) is 203 nC @ 20 V.
  5. What are the typical applications of the NVHL020N120SC1? Typical applications include automotive on-board chargers and automotive DC-DC converters for EV/HEV.
  6. Is the NVHL020N120SC1 AEC-Q101 qualified? Yes, the NVHL020N120SC1 is AEC-Q101 qualified and PPAP capable.
  7. What is the operating temperature range of the NVHL020N120SC1? The operating temperature range is -55°C to 175°C (TJ).
  8. What is the package type of the NVHL020N120SC1? The package type is TO-247-3.
  9. Is the NVHL020N120SC1 RoHS compliant? Yes, the NVHL020N120SC1 is RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection).
  10. What is the maximum power dissipation of the NVHL020N120SC1? The maximum power dissipation is 535 W (Tc).

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:103A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id:4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs:203 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:2890 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):535W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number NVHL020N120SC1 NVHL040N120SC1 NVHL080N120SC1 NVH4L020N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 103A (Tc) 60A (Tc) 44A (Tc) 102A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 20V 56mOhm @ 35A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V
Vgs(th) (Max) @ Id 4.3V @ 20mA 4.3V @ 10mA 4.3V @ 5mA 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 203 nC @ 20 V 106 nC @ 20 V 56 nC @ 20 V 220 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 2890 pF @ 800 V 1781 pF @ 800 V 1670 pF @ 800 V 2943 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 535W (Tc) 348W (Tc) 348W (Tc) 510W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-4L
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-4

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