Overview
The NVH4L020N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device is part of the EliteSiC family and is designed for high-performance applications requiring low on-resistance and high switching speeds. The NVH4L020N120SC1 features a typical on-resistance (RDS(on)) of 20 mΩ and a maximum drain-to-source voltage (VDSS) of 1200 V, making it suitable for demanding power conversion and automotive systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 1200 | V |
| Gate-to-Source Voltage | VGS | −15/+25 | V |
| Continuous Drain Current (TC = 25°C) | ID | 101 | A |
| Power Dissipation (TC = 25°C) | PD | 500 | W |
| Pulsed Drain Current | IDM | 408 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 46 | A |
| Gate Threshold Voltage | VGS(TH) | 1.8 to 4.3 | V |
| Drain-to-Source On Resistance | RDS(on) | 20 to 28 mΩ | mΩ |
| Total Gate Charge | QG(TOT) | 220 nC | nC |
Key Features
- Low On-Resistance: Typical RDS(on) of 20 mΩ at VGS = 20 V, ID = 60 A, TJ = 25°C.
- Ultra Low Gate Charge: Total gate charge (QG(TOT)) of 220 nC.
- High Speed Switching: Low capacitance (Coss = 258 pF) for high-speed switching applications.
- Avalanche Tested: 100% avalanche tested for reliability.
- AEC-Q101 Qualified and PPAP Capable: Compliant with automotive standards for reliability and quality.
- Halide Free and RoHS Compliant: Environmentally friendly and compliant with RoHS regulations.
Applications
- Automotive On Board Charger: Suitable for high-power charging systems in electric and hybrid vehicles.
- Automotive DC-DC Converter for EV/HEV: Used in power conversion systems for electric and hybrid vehicles.
- Automotive Traction Inverter: Ideal for high-efficiency and high-reliability traction inverters in electric vehicles.
Q & A
- What is the maximum drain-to-source voltage of the NVH4L020N120SC1?
The maximum drain-to-source voltage (VDSS) is 1200 V.
- What is the typical on-resistance of the NVH4L020N120SC1?
The typical on-resistance (RDS(on)) is 20 mΩ at VGS = 20 V, ID = 60 A, TJ = 25°C.
- What is the total gate charge of the NVH4L020N120SC1?
The total gate charge (QG(TOT)) is 220 nC.
- Is the NVH4L020N120SC1 AEC-Q101 qualified?
Yes, the device is AEC-Q101 qualified and PPAP capable.
- What are the typical applications of the NVH4L020N120SC1?
Typical applications include automotive on-board chargers, automotive DC-DC converters for EV/HEV, and automotive traction inverters.
- What is the maximum continuous drain current at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 101 A.
- What is the power dissipation at TC = 25°C?
The power dissipation (PD) at TC = 25°C is 500 W.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range (TJ, Tstg) is −55 to +175°C.
- Is the NVH4L020N120SC1 RoHS compliant?
Yes, the device is halide free and RoHS compliant with exemption 7a, Pb-free 2LI (on second level interconnection).
- What is the maximum lead temperature for soldering?
The maximum lead temperature for soldering (TL) is 300°C.
