Overview
The NVH4L080N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features low ON resistance, compact chip size, and reduced capacitance and gate charge, resulting in higher efficiency, faster operation frequencies, increased power density, reduced EMI, and a smaller system size.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (VDSmax) | 1200 | V |
| Max. Gate-to-Source Voltage (VGSmax) | −15 / +25 | V |
| Continuous Drain Current (ID) | 29 A @ VGS = 20 V, TC = 25°C | A |
| Pulse Drain Current (ID(Pulse)) | 125 A | A |
| Static Drain-to-Source On Resistance (RDS(on)) | 80 mΩ @ VGS = 20 V, ID = 20 A | mΩ |
| Gate-to-Source Threshold Voltage (VGS(th)) | 1.8 - 4.3 | V |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | −55 to +175 | °C |
| Thermal Resistance, Junction-to-Case (RθJC) | 0.88 | °C/W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 40 | °C/W |
| Package | TO-247-4L |
Key Features
- High voltage rating of 1200 V at TJ = 175°C
- Low ON resistance of 80 mΩ at VGS = 20 V, ID = 20 A
- High-speed switching with low capacitance
- 100% avalanche tested
- AEC-Q101 qualified and PPAP capable
- Halide-free and RoHS compliant with exemption 7a, Pb-free on second level interconnection
- Compact chip size ensuring low capacitance and gate charge
Applications
- Automotive auxiliary motor drive
- Automotive on-board charger
- Automotive DC-DC converter for EV/HEV
Q & A
- What is the maximum drain-to-source voltage of the NVH4L080N120SC1? The maximum drain-to-source voltage is 1200 V.
- What is the continuous drain current rating at 25°C? The continuous drain current is 29 A at VGS = 20 V and TC = 25°C.
- What is the typical ON resistance of the NVH4L080N120SC1? The typical ON resistance is 80 mΩ at VGS = 20 V and ID = 20 A.
- Is the NVH4L080N120SC1 AEC-Q101 qualified? Yes, the device is AEC-Q101 qualified and PPAP capable.
- What is the operating junction temperature range of the NVH4L080N120SC1? The operating and storage junction temperature range is −55 to +175°C.
- What package type is used for the NVH4L080N120SC1? The device is packaged in a TO-247-4L case.
- What are some of the key applications for the NVH4L080N120SC1? Key applications include automotive auxiliary motor drive, automotive on-board charger, and automotive DC-DC converter for EV/HEV.
- Is the NVH4L080N120SC1 RoHS compliant? Yes, the device is halide-free and RoHS compliant with exemption 7a, Pb-free on second level interconnection.
- What is the thermal resistance from junction to case (RθJC) for the NVH4L080N120SC1? The thermal resistance from junction to case is 0.88 °C/W.
- What is the maximum pulse drain current rating for the NVH4L080N120SC1? The maximum pulse drain current is 125 A.
