NVH4L080N120SC1
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onsemi NVH4L080N120SC1

Manufacturer No:
NVH4L080N120SC1
Manufacturer:
onsemi
Package:
Tube
Description:
SICFET N-CH 1200V 29A TO247-4
Delivery:
Payment:
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Product Introduction

Overview

The NVH4L080N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device leverages advanced SiC technology to offer superior switching performance and higher reliability compared to traditional silicon-based MOSFETs. It features low ON resistance, compact chip size, and reduced capacitance and gate charge, resulting in higher efficiency, faster operation frequencies, increased power density, reduced EMI, and a smaller system size.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDSmax)1200V
Max. Gate-to-Source Voltage (VGSmax)−15 / +25V
Continuous Drain Current (ID)29 A @ VGS = 20 V, TC = 25°CA
Pulse Drain Current (ID(Pulse))125 AA
Static Drain-to-Source On Resistance (RDS(on))80 mΩ @ VGS = 20 V, ID = 20 A
Gate-to-Source Threshold Voltage (VGS(th))1.8 - 4.3V
Operating and Storage Junction Temperature Range (TJ, TSTG)−55 to +175°C
Thermal Resistance, Junction-to-Case (RθJC)0.88°C/W
Thermal Resistance, Junction-to-Ambient (RθJA)40°C/W
PackageTO-247-4L

Key Features

  • High voltage rating of 1200 V at TJ = 175°C
  • Low ON resistance of 80 mΩ at VGS = 20 V, ID = 20 A
  • High-speed switching with low capacitance
  • 100% avalanche tested
  • AEC-Q101 qualified and PPAP capable
  • Halide-free and RoHS compliant with exemption 7a, Pb-free on second level interconnection
  • Compact chip size ensuring low capacitance and gate charge

Applications

  • Automotive auxiliary motor drive
  • Automotive on-board charger
  • Automotive DC-DC converter for EV/HEV

Q & A

  1. What is the maximum drain-to-source voltage of the NVH4L080N120SC1? The maximum drain-to-source voltage is 1200 V.
  2. What is the continuous drain current rating at 25°C? The continuous drain current is 29 A at VGS = 20 V and TC = 25°C.
  3. What is the typical ON resistance of the NVH4L080N120SC1? The typical ON resistance is 80 mΩ at VGS = 20 V and ID = 20 A.
  4. Is the NVH4L080N120SC1 AEC-Q101 qualified? Yes, the device is AEC-Q101 qualified and PPAP capable.
  5. What is the operating junction temperature range of the NVH4L080N120SC1? The operating and storage junction temperature range is −55 to +175°C.
  6. What package type is used for the NVH4L080N120SC1? The device is packaged in a TO-247-4L case.
  7. What are some of the key applications for the NVH4L080N120SC1? Key applications include automotive auxiliary motor drive, automotive on-board charger, and automotive DC-DC converter for EV/HEV.
  8. Is the NVH4L080N120SC1 RoHS compliant? Yes, the device is halide-free and RoHS compliant with exemption 7a, Pb-free on second level interconnection.
  9. What is the thermal resistance from junction to case (RθJC) for the NVH4L080N120SC1? The thermal resistance from junction to case is 0.88 °C/W.
  10. What is the maximum pulse drain current rating for the NVH4L080N120SC1? The maximum pulse drain current is 125 A.

Product Attributes

FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 800 V
FET Feature:- 
Power Dissipation (Max):170mW (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4L
Package / Case:TO-247-4
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Similar Products

Part Number NVH4L080N120SC1 NVHL080N120SC1 NVH4L020N120SC1 NVH4L040N120SC1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V 1200 V 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 44A (Tc) 102A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V 20V 20V 20V
Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 28mOhm @ 60A, 20V 56mOhm @ 35A, 20V
Vgs(th) (Max) @ Id 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 20mA 4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V 56 nC @ 20 V 220 nC @ 20 V 106 nC @ 20 V
Vgs (Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V 1670 pF @ 800 V 2943 pF @ 800 V 1762 pF @ 800 V
FET Feature - - - -
Power Dissipation (Max) 170mW (Tc) 348W (Tc) 510W (Tc) 319W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-4L TO-247-3 TO-247-4L TO-247-4L
Package / Case TO-247-4 TO-247-3 TO-247-4 TO-247-4

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