Overview
The NVH4L040N120SC1 is a Silicon Carbide (SiC) N-Channel MOSFET produced by onsemi. This device is part of the EliteSiC family and is known for its high efficiency and reliability in high-power applications. The SiC technology offers superior performance compared to traditional silicon-based MOSFETs, with advantages such as lower switching losses, higher thermal stability, and improved overall system efficiency.
Key Specifications
| Parameter | Value |
|---|---|
| Voltage Rating (Vds) | 1200 V |
| On-Resistance (Rds(on)) | 40 mΩ @ 20 V |
| Continuous Drain Current (Id) | 58 A |
| Pulse Drain Current (Idp) | 35 A |
| Power Dissipation (Pd) | 319 W |
| Threshold Voltage (Vth) | 4.3 V |
| Package Type | TO-247-4L |
Key Features
- High voltage rating of 1200 V, making it suitable for high-power applications.
- Low on-resistance of 40 mΩ, reducing energy losses and improving efficiency.
- High continuous drain current of 58 A and pulse drain current of 35 A.
- High power dissipation capability of 319 W.
- Threshold voltage of 4.3 V for reliable switching.
- TO-247-4L package for robust and reliable mounting.
Applications
The NVH4L040N120SC1 SiC MOSFET is ideal for various high-power applications, including but not limited to:
- Electric vehicles and hybrid electric vehicles.
- Renewable energy systems such as solar and wind power inverters.
- Industrial power supplies and motor drives.
- High-frequency switching applications.
- Power factor correction (PFC) circuits.
Q & A
- What is the voltage rating of the NVH4L040N120SC1 MOSFET?
The voltage rating of the NVH4L040N120SC1 MOSFET is 1200 V. - What is the on-resistance of the NVH4L040N120SC1 MOSFET?
The on-resistance (Rds(on)) of the NVH4L040N120SC1 MOSFET is 40 mΩ @ 20 V. - What is the continuous drain current of the NVH4L040N120SC1 MOSFET?
The continuous drain current (Id) of the NVH4L040N120SC1 MOSFET is 58 A. - What is the pulse drain current of the NVH4L040N120SC1 MOSFET?
The pulse drain current (Idp) of the NVH4L040N120SC1 MOSFET is 35 A. - What is the power dissipation capability of the NVH4L040N120SC1 MOSFET?
The power dissipation capability (Pd) of the NVH4L040N120SC1 MOSFET is 319 W. - What is the threshold voltage of the NVH4L040N120SC1 MOSFET?
The threshold voltage (Vth) of the NVH4L040N120SC1 MOSFET is 4.3 V. - What package type does the NVH4L040N120SC1 MOSFET use?
The NVH4L040N120SC1 MOSFET uses the TO-247-4L package. - What are the advantages of using SiC MOSFETs like the NVH4L040N120SC1?
SIC MOSFETs offer lower switching losses, higher thermal stability, and improved overall system efficiency compared to traditional silicon-based MOSFETs. - In which applications is the NVH4L040N120SC1 MOSFET commonly used?
The NVH4L040N120SC1 MOSFET is commonly used in electric vehicles, renewable energy systems, industrial power supplies, motor drives, and high-frequency switching applications. - Where can I find detailed specifications for the NVH4L040N120SC1 MOSFET?
Detailed specifications for the NVH4L040N120SC1 MOSFET can be found in the datasheet available on onsemi's official website and other electronic component databases like LCSC and AllDatasheet.
