Overview
The NTTFS4C08NTAG is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET features a low on-resistance (RDS(on)) and optimized gate charge, making it suitable for minimizing conduction, driver, and switching losses. The device is packaged in a WDFN8 (μ8FL) package, which is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 15 | A |
| Continuous Drain Current (TA = 85°C) | ID | 10.8 | A |
| Power Dissipation (RθJA) | P | 23 | A |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 4.7 - 5.9 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Junction-to-Case Thermal Resistance | RθJC | 4.9 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 58.8 | °C/W |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High current capability up to 52 A
- Low gate threshold voltage and negative threshold temperature coefficient
Applications
- DC-DC converters
- Power load switches
- Notebook battery management
Q & A
- What is the maximum drain-to-source voltage of the NTTFS4C08NTAG?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 15 A at 25°C and 10.8 A at 85°C.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 30 A?
The typical on-resistance (RDS(on)) is 4.7 - 5.9 mΩ.
- Is the NTTFS4C08NTAG RoHS compliant?
- What are the typical applications of the NTTFS4C08NTAG?
The typical applications include DC-DC converters, power load switches, and notebook battery management.
- What is the junction-to-case thermal resistance (RθJC)?
The junction-to-case thermal resistance (RθJC) is 4.9 °C/W.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.3 - 2.2 V.
- What is the maximum single pulse drain-to-source avalanche energy?
The maximum single pulse drain-to-source avalanche energy (EAS) is 42 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What is the package type of the NTTFS4C08NTAG?
The package type is WDFN8 (μ8FL).
