Overview
The NTTFS4C06NTAG is a power MOSFET produced by onsemi, designed for high-performance applications. This single N-channel MOSFET is housed in a WDFN8 (8FL) package and is known for its low RDS(on) and optimized gate charge, which minimize conduction and switching losses. The device is Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of modern electronic systems.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 18 | A |
| Continuous Drain Current (TA = 85°C) | ID | 13 | A |
| Power Dissipation (TA = 25°C) | PD | 2.16 | W |
| Junction-to-Case Thermal Resistance | RθJC | 4.1 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 58 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 30 A) | RDS(on) | 3.4 - 4.2 mΩ | mΩ |
| Total Gate Charge (VGS = 10 V, VDS = 15 V; ID = 30 A) | QG(TOT) | 26 - 36 nC | nC |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High continuous drain current up to 18 A at TA = 25°C
- High power dissipation capability up to 2.16 W at TA = 25°C
- Low junction-to-case thermal resistance of 4.1 °C/W
Applications
- DC-DC converters
- Power load switches
- Notebook battery management systems
Q & A
- What is the maximum drain-to-source voltage of the NTTFS4C06NTAG MOSFET?
The maximum drain-to-source voltage is 30 V.
- What is the continuous drain current at TA = 25°C?
The continuous drain current at TA = 25°C is 18 A.
- What is the junction-to-case thermal resistance of the device?
The junction-to-case thermal resistance is 4.1 °C/W.
- Is the NTTFS4C06NTAG MOSFET RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What are some typical applications of the NTTFS4C06NTAG MOSFET?
Typical applications include DC-DC converters, power load switches, and notebook battery management systems.
- What is the gate threshold voltage range of the device?
The gate threshold voltage range is 1.3 to 2.2 V.
- What is the total gate charge at VGS = 10 V and VDS = 15 V?
The total gate charge is 26 to 36 nC.
- What is the maximum power dissipation at TA = 25°C?
The maximum power dissipation at TA = 25°C is 2.16 W.
- What is the package type of the NTTFS4C06NTAG MOSFET?
The device is housed in a WDFN8 (8FL) package.
- What are the thermal resistance values for junction-to-ambient in steady state and for short pulses?
The junction-to-ambient thermal resistance in steady state is 58 °C/W, and for short pulses (t ≤ 10 s), it is 28.3 °C/W.
