NTTFS4C02NTAG
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onsemi NTTFS4C02NTAG

Manufacturer No:
NTTFS4C02NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 170A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4C02NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the AFSM T6 series and is designed for applications requiring high current handling and low on-resistance. The MOSFET features an 8-pin WDFN package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 29 A
RDS(ON) (On-Resistance) 1.5 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage) 1.5 - 3.5 V
PD (Power Dissipation) 150 W (at TA = 25°C) W
Package 8-pin WDFN

Key Features

  • High Current Handling: The NTTFS4C02NTAG can handle continuous drain currents up to 29 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of 1.5 mΩ at VGS = 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • Compact Package: The 8-pin WDFN package is compact and thermally efficient, ideal for space-constrained designs.
  • High Voltage Rating: The device can withstand drain-source voltages up to 30 V, ensuring reliability in various power management scenarios.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and other power management systems.
  • Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
  • Switching Applications: Ideal for high-frequency switching applications such as inverter circuits and power amplifiers.
  • Automotive Systems: Can be used in automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum continuous drain current of the NTTFS4C02NTAG MOSFET?

    The maximum continuous drain current is 29 A.

  2. What is the typical on-resistance of the NTTFS4C02NTAG at VGS = 10 V?

    The typical on-resistance is 1.5 mΩ.

  3. What is the maximum drain-source voltage rating of the NTTFS4C02NTAG?

    The maximum drain-source voltage rating is 30 V.

  4. What package type does the NTTFS4C02NTAG use?

    The NTTFS4C02NTAG uses an 8-pin WDFN package.

  5. What are some common applications for the NTTFS4C02NTAG MOSFET?

    Common applications include power management, motor control, switching applications, and automotive systems.

  6. What is the power dissipation of the NTTFS4C02NTAG at TA = 25°C?

    The power dissipation is 150 W at TA = 25°C.

  7. What is the threshold voltage range of the NTTFS4C02NTAG?

    The threshold voltage range is 1.5 - 3.5 V.

  8. Is the NTTFS4C02NTAG suitable for high-frequency switching applications?

    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling.

  9. Can the NTTFS4C02NTAG be used in automotive systems?

    Yes, it can be used in automotive systems due to its high reliability and performance.

  10. Where can I find detailed specifications and datasheets for the NTTFS4C02NTAG?

    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NTTFS4C02NTAG NTTFS4C08NTAG NTTFS4C06NTAG NTTFS4C05NTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 9.3A (Ta) 11A (Ta), 67A (Tc) 12A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.25mOhm @ 20A, 10V 5.9mOhm @ 30A, 10V 4.2mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 18.2 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 15 V 1113 pF @ 15 V 3366 pF @ 15 V 1988 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 91W (Tc) 820mW (Ta), 25.5W (Tc) 810mW (Ta), 31W (Tc) 820mW (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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