NTTFS4C02NTAG
  • Share:

onsemi NTTFS4C02NTAG

Manufacturer No:
NTTFS4C02NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 170A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4C02NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is part of the AFSM T6 series and is designed for applications requiring high current handling and low on-resistance. The MOSFET features an 8-pin WDFN package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 30 V
ID (Continuous Drain Current) 29 A
RDS(ON) (On-Resistance) 1.5 mΩ (typical at VGS = 10 V)
VGS(th) (Threshold Voltage) 1.5 - 3.5 V
PD (Power Dissipation) 150 W (at TA = 25°C) W
Package 8-pin WDFN

Key Features

  • High Current Handling: The NTTFS4C02NTAG can handle continuous drain currents up to 29 A, making it suitable for high-power applications.
  • Low On-Resistance: With a typical on-resistance of 1.5 mΩ at VGS = 10 V, this MOSFET minimizes power losses and enhances efficiency.
  • Compact Package: The 8-pin WDFN package is compact and thermally efficient, ideal for space-constrained designs.
  • High Voltage Rating: The device can withstand drain-source voltages up to 30 V, ensuring reliability in various power management scenarios.

Applications

  • Power Management: Suitable for DC-DC converters, power supplies, and other power management systems.
  • Motor Control: Used in motor drive applications due to its high current handling and low on-resistance.
  • Switching Applications: Ideal for high-frequency switching applications such as inverter circuits and power amplifiers.
  • Automotive Systems: Can be used in automotive systems requiring high reliability and performance.

Q & A

  1. What is the maximum continuous drain current of the NTTFS4C02NTAG MOSFET?

    The maximum continuous drain current is 29 A.

  2. What is the typical on-resistance of the NTTFS4C02NTAG at VGS = 10 V?

    The typical on-resistance is 1.5 mΩ.

  3. What is the maximum drain-source voltage rating of the NTTFS4C02NTAG?

    The maximum drain-source voltage rating is 30 V.

  4. What package type does the NTTFS4C02NTAG use?

    The NTTFS4C02NTAG uses an 8-pin WDFN package.

  5. What are some common applications for the NTTFS4C02NTAG MOSFET?

    Common applications include power management, motor control, switching applications, and automotive systems.

  6. What is the power dissipation of the NTTFS4C02NTAG at TA = 25°C?

    The power dissipation is 150 W at TA = 25°C.

  7. What is the threshold voltage range of the NTTFS4C02NTAG?

    The threshold voltage range is 1.5 - 3.5 V.

  8. Is the NTTFS4C02NTAG suitable for high-frequency switching applications?

    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high current handling.

  9. Can the NTTFS4C02NTAG be used in automotive systems?

    Yes, it can be used in automotive systems due to its high reliability and performance.

  10. Where can I find detailed specifications and datasheets for the NTTFS4C02NTAG?

    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:170A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2980 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

$1.72
119

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTTFS4C02NTAG NTTFS4C08NTAG NTTFS4C06NTAG NTTFS4C05NTAG
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 9.3A (Ta) 11A (Ta), 67A (Tc) 12A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.25mOhm @ 20A, 10V 5.9mOhm @ 30A, 10V 4.2mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V 18.2 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2980 pF @ 15 V 1113 pF @ 15 V 3366 pF @ 15 V 1988 pF @ 15 V
FET Feature - - - -
Power Dissipation (Max) 91W (Tc) 820mW (Ta), 25.5W (Tc) 810mW (Ta), 31W (Tc) 820mW (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP22NM60N
STP22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220AB
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STL10N65M2
STL10N65M2
STMicroelectronics
MOSFET N-CH 650V 4.5A POWERFLAT
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

BAV70-ON
BAV70-ON
onsemi
RECTIFIER DIODE, 2 ELEMENT, 0.2A
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
MC74HC4051ADWR2G
MC74HC4051ADWR2G
onsemi
IC MUX/DEMUX 8X1 16SOIC
MC100ELT21DR2G
MC100ELT21DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5