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NTTFS4C05NTAG
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onsemi NTTFS4C05NTAG

Manufacturer No:
NTTFS4C05NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 12A/75A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4C05NTAG is a high-performance N-channel power MOSFET produced by onsemi. This device is designed to offer excellent electrical characteristics, making it suitable for a variety of power management and switching applications. The MOSFET features a low on-resistance and high current handling capability, which are crucial for efficient power management in modern electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)19.4 A
RDS(ON) (On-Resistance)0.0029 Ω
VGS(th) (Threshold Voltage)1.5 V to 3.5 V
PackageWDFN-8 (Pb-Free)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (RDS(ON)) of 0.0029 Ω, ensuring minimal power loss.
  • High continuous drain current (ID) of 19.4 A, suitable for high-power applications.
  • Compact WDFN-8 package, which is Pb-Free, making it environmentally friendly.
  • Wide operating temperature range from -55°C to 150°C, enhancing reliability in various environments.
  • High threshold voltage (VGS(th)) range of 1.5 V to 3.5 V, providing robust gate control.

Applications

The NTTFS4C05NTAG MOSFET is versatile and can be used in a range of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and power management in automotive systems.
  • Industrial power systems and control circuits.
  • Consumer electronics requiring high efficiency and reliability.

Q & A

  1. What is the maximum drain-source voltage of the NTTFS4C05NTAG MOSFET?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 19.4 A.
  3. What is the on-resistance of the NTTFS4C05NTAG?
    The on-resistance (RDS(ON)) is 0.0029 Ω.
  4. What package type is used for the NTTFS4C05NTAG?
    The package type is WDFN-8, which is Pb-Free.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to 150°C.
  6. What are some common applications for the NTTFS4C05NTAG MOSFET?
    Common applications include power supplies, motor control systems, automotive systems, industrial power systems, and consumer electronics.
  7. Is the NTTFS4C05NTAG environmentally friendly?
    Yes, the WDFN-8 package is Pb-Free, making it environmentally friendly.
  8. What is the threshold voltage range for the NTTFS4C05NTAG?
    The threshold voltage (VGS(th)) range is from 1.5 V to 3.5 V.
  9. Where can I find detailed specifications for the NTTFS4C05NTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and element14.
  10. Is the NTTFS4C05NTAG suitable for high-power applications?
    Yes, with its high continuous drain current and low on-resistance, it is suitable for high-power applications.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.6mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1988 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):820mW (Ta), 33W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Part Number NTTFS4C05NTAG NTTFS4C25NTAG NTTFS4C08NTAG NTTFS4C06NTAG NTTFS4C05NTWG NTTFS4C55NTAG NTTFS4C65NTAG NTTFS4H05NTAG NTTFS4C02NTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Active Active Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel - - N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) - - MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V - - 25 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 75A (Tc) 5A (Ta), 27A (Tc) 9.3A (Ta) 11A (Ta), 67A (Tc) 12A (Ta), 75A (Tc) - 7.7A (Ta) 22.4A (Ta), 94A (Tc) 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V - - 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 30A, 10V 17mOhm @ 10A, 10V 5.9mOhm @ 30A, 10V 4.2mOhm @ 30A, 10V 3.6mOhm @ 30A, 10V - - 3.3mOhm @ 30A, 10V 2.25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA - - 2.1V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V 10.3 nC @ 10 V 18.2 nC @ 10 V 36 nC @ 10 V 31 nC @ 10 V - - 18.9 nC @ 10 V 20 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V - - ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1988 pF @ 15 V 500 pF @ 15 V 1113 pF @ 15 V 3366 pF @ 15 V 1988 pF @ 15 V - - 1205 pF @ 12 V 2980 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 820mW (Ta), 33W (Tc) 690mW (Ta), 20.2W (Tc) 820mW (Ta), 25.5W (Tc) 810mW (Ta), 31W (Tc) 820mW (Ta), 33W (Tc) - - 2.66W (Ta), 46.3W (Tc) 91W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - - 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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