Overview
The NTTFS4C25NTAG is a single N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a WDFN8 (8FL) case and is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It features low RDS(on) to minimize conduction losses, low capacitance to minimize driver losses, and optimized gate charge to minimize switching losses. These characteristics make it an ideal choice for various power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 7.7 | A |
| Continuous Drain Current (TJ = 85°C) | ID | 5.8 | A |
| Power Dissipation (TJ = 25°C) | PD | 1.63 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 81 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 10 A) | RDS(on) | 13 - 17 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| Input Capacitance | CISS | 500 | pF |
| Output Capacitance | COSS | 295 | pF |
| Reverse Transfer Capacitance | CRSS | 85 | pF |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
- High current capability up to 27 A
- High power dissipation up to 20.2 W
- Low forward diode voltage (VSD) of 0.87 V at 10 A
- Fast switching times with turn-on delay time (tdON) of 4.0 ns and turn-off delay time (tdOFF) of 13 ns
Applications
- DC-DC converters
- Power load switches
- Notebook battery management
- Other high-power switching and power management applications
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTTFS4C25NTAG MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current (ID) at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 7.7 A.
- What is the power dissipation (PD) at TJ = 25°C?
The power dissipation (PD) at TJ = 25°C is 1.63 W.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +150 °C.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 10 A?
The typical drain-to-source on resistance (RDS(on)) at VGS = 10 V and ID = 10 A is 13 - 17 mΩ.
- What are the key applications of the NTTFS4C25NTAG MOSFET?
The key applications include DC-DC converters, power load switches, and notebook battery management.
- Is the NTTFS4C25NTAG MOSFET RoHS compliant?
Yes, the NTTFS4C25NTAG MOSFET is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What is the typical turn-on delay time (tdON) and turn-off delay time (tdOFF)?
The typical turn-on delay time (tdON) is 4.0 ns and the turn-off delay time (tdOFF) is 13 ns at VGS = 10 V.
- What is the maximum pulsed drain current (IDM)?
The maximum pulsed drain current (IDM) is 81 A for a pulse width of 10 μs.
- What is the forward diode voltage (VSD) at 10 A?
The forward diode voltage (VSD) at 10 A is 0.87 V.
