Overview
The NTTFS4C25NTWG is a power MOSFET from onsemi, designed for high-performance applications. This single N-Channel MOSFET features a low on-resistance (RDS(on)) of 17 mΩ at 10 V and 26.5 mΩ at 4.5 V, making it ideal for minimizing conduction losses. The device is housed in a WDFN8 (μ8FL) package, which is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. It is AEC-Q101 qualified and PPAP capable, ensuring reliability in automotive and other demanding applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 7.7 | A |
| Continuous Drain Current (TA = 85°C) | ID | 5.8 | A |
| Power Dissipation (TA = 25°C) | PD | 1.63 | W |
| Junction-to-Case Thermal Resistance | RJC | 6.2 | °C/W |
| Junction-to-Ambient Thermal Resistance (Steady State) | RJA | 76.7 | °C/W |
| Gate Threshold Voltage | VGS(TH) | 1.3 - 2.2 | V |
| On-Resistance at 10 V | RDS(on) | 17 mΩ | mΩ |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-Free, Halogen Free/BFR Free, and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
Applications
- DC-DC converters
- Power load switches
- Notebook battery management
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTTFS4C25NTWG?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 7.7 A at 25°C and 5.8 A at 85°C.
- What is the on-resistance (RDS(on)) at 10 V?
The on-resistance (RDS(on)) at 10 V is 17 mΩ.
- Is the NTTFS4C25NTWG RoHS compliant?
Yes, the NTTFS4C25NTWG is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
- What are the typical applications of the NTTFS4C25NTWG?
Typical applications include DC-DC converters, power load switches, and notebook battery management.
- What is the junction-to-case thermal resistance (RJC) of the NTTFS4C25NTWG?
The junction-to-case thermal resistance (RJC) is 6.2 °C/W.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.3 V to 2.2 V.
- Is the NTTFS4C25NTWG AEC-Q101 qualified?
Yes, the NTTFS4C25NTWG is AEC-Q101 qualified and PPAP capable.
- What package type is used for the NTTFS4C25NTWG?
The device is housed in a WDFN8 (μ8FL) package.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation at 25°C is 1.63 W.
