NTTFS4930NTAG
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onsemi NTTFS4930NTAG

Manufacturer No:
NTTFS4930NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 4.5A/23A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NTTFS4930NTAG is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET features a drain-to-source voltage (VDSS) of 30 V and a continuous drain current (ID) of up to 23 A. It is packaged in a WDFN8 (8FL) Pb-Free, Halogen Free/BFR Free, and RoHS compliant package. The device is optimized for low conduction losses, low capacitance, and minimized switching losses, making it suitable for a variety of power management and control applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID7.2A
Continuous Drain Current (TA = 85°C)ID5.2A
Pulsed Drain Current (tp = 10 μs)IDM92A
Operating Junction and Storage TemperatureTJ, Tstg-55 to +150°C
Drain-to-Source On Resistance (VGS = 10 V, ID = 7 A)RDS(on)15 - 23
Gate Threshold VoltageVGS(TH)1.2 - 2.2V
Junction-to-Case Thermal ResistanceRθJC6.2°C/W

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-Free, Halogen Free/BFR Free, and RoHS compliant
  • High continuous drain current and pulsed drain current capabilities
  • Wide operating junction and storage temperature range

Applications

  • DC-DC converters
  • Power load switch
  • Notebook battery management
  • Motor control

Q & A

  1. What is the maximum drain-to-source voltage of the NTTFS4930NTAG MOSFET?
    The maximum drain-to-source voltage (VDSS) is 30 V.
  2. What is the continuous drain current at 25°C and 85°C?
    The continuous drain current is 7.2 A at 25°C and 5.2 A at 85°C.
  3. What is the pulsed drain current rating?
    The pulsed drain current (IDM) is 92 A for a pulse width of 10 μs.
  4. What is the operating junction and storage temperature range?
    The operating junction and storage temperature range is -55°C to +150°C.
  5. What is the typical on-resistance of the MOSFET?
    The typical on-resistance (RDS(on)) is between 15 mΩ and 23 mΩ at VGS = 10 V and ID = 7 A.
  6. Is the NTTFS4930NTAG MOSFET RoHS compliant?
    Yes, the NTTFS4930NTAG is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.
  7. What are some common applications of the NTTFS4930NTAG MOSFET?
    Common applications include DC-DC converters, power load switches, notebook battery management, and motor control.
  8. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(TH)) range is 1.2 V to 2.2 V.
  9. What is the junction-to-case thermal resistance?
    The junction-to-case thermal resistance (RθJC) is 6.2 °C/W.
  10. What is the package type of the NTTFS4930NTAG MOSFET?
    The package type is WDFN8 (8FL).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.5 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:476 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):790mW (Ta), 20.2W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS4930NTWG
NTTFS4930NTWG
MOSFET N-CH 30V 4.5A/23A 8WDFN

Similar Products

Part Number NTTFS4930NTAG NTTFS4932NTAG NTTFS4937NTAG NTTFS4939NTAG NTTFS4930NTWG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta), 23A (Tc) 11A (Ta), 79A (Tc) 11A (Ta), 75A (Tc) 8.9A (Ta), 52A (Tc) 4.5A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 6A, 10V 4mOhm @ 20A, 10V 4.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V 23mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 4.5 V 46.5 nC @ 10 V 35.5 nC @ 10 V 28 nC @ 10 V 5.5 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 476 pF @ 15 V 3111 pF @ 15 V 2540 pF @ 15 V 1979 pF @ 15 V 476 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 790mW (Ta), 20.2W (Tc) 850mW (Ta), 43W (Tc) 860mW (Ta), 43.1W (Tc) 850mW (Ta), 29.8W (Tc) 790mW (Ta), 20.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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