NTTFS4937NTAG
  • Share:

onsemi NTTFS4937NTAG

Manufacturer No:
NTTFS4937NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A/75A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4937NTAG is a power MOSFET from ON Semiconductor, designed for high-performance applications. This N-Channel MOSFET is packaged in a WDFN8 (μ8FL) package and is known for its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. The device is Pb-free, halogen-free, BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 17 A
Continuous Drain Current (TA = 85°C) ID 12 A
Power Dissipation (TA = 25°C) PD 2.24 W
Junction-to-Case Thermal Resistance RθJC 2.9 °C/W
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 55.9 °C/W
Turn-On Delay Time td(on) 9.8 ns
Rise Time tr 19.8 ns
Turn-Off Delay Time td(off) 28.8 ns
Fall Time tf 4 ns
Forward Diode Voltage VSD 0.97 V
Reverse Recovery Time tRR 15.3 ns

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, BFR-free, and RoHS compliant
  • High current handling capability up to 75 A
  • Low thermal resistance for efficient heat dissipation

Applications

  • Low-side DC-DC converters
  • Power load switches
  • Notebook battery management
  • Motor control

Q & A

  1. What is the maximum drain-to-source voltage of the NTTFS4937NTAG MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current rating at 25°C and 85°C?

    The continuous drain current (ID) is 17 A at 25°C and 12 A at 85°C.

  3. What are the key features of the NTTFS4937NTAG MOSFET?

    The key features include low RDS(on), low capacitance, optimized gate charge, and RoHS compliance.

  4. What are the typical applications of the NTTFS4937NTAG MOSFET?

    Typical applications include low-side DC-DC converters, power load switches, notebook battery management, and motor control.

  5. What is the junction-to-case thermal resistance of the NTTFS4937NTAG?

    The junction-to-case thermal resistance (RθJC) is 2.9 °C/W.

  6. What is the turn-on delay time and rise time of the NTTFS4937NTAG?

    The turn-on delay time (td(on)) is 9.8 ns, and the rise time (tr) is 19.8 ns.

  7. Is the NTTFS4937NTAG MOSFET environmentally friendly?
  8. What is the maximum power dissipation of the NTTFS4937NTAG at 25°C?

    The maximum power dissipation (PD) at 25°C is 2.24 W.

  9. What is the forward diode voltage of the NTTFS4937NTAG?

    The forward diode voltage (VSD) is 0.97 V at TJ = 25°C.

  10. What is the reverse recovery time of the NTTFS4937NTAG?

    The reverse recovery time (tRR) is 15.3 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2540 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):860mW (Ta), 43.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
0 Remaining View Similar

In Stock

-
419

Please send RFQ , we will respond immediately.

Same Series
NTTFS4937NTWG
NTTFS4937NTWG
MOSFET N-CH 30V 11A/75A 8WDFN

Similar Products

Part Number NTTFS4937NTAG NTTFS4937NTWG NTTFS4939NTAG NTTFS4930NTAG NTTFS4932NTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 75A (Tc) 11A (Ta), 75A (Tc) 8.9A (Ta), 52A (Tc) 4.5A (Ta), 23A (Tc) 11A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V 4.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V 23mOhm @ 6A, 10V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.5 nC @ 10 V 35.5 nC @ 10 V 28 nC @ 10 V 5.5 nC @ 4.5 V 46.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 15 V 2540 pF @ 15 V 1979 pF @ 15 V 476 pF @ 15 V 3111 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 860mW (Ta), 43.1W (Tc) 860mW (Ta), 43.1W (Tc) 850mW (Ta), 29.8W (Tc) 790mW (Ta), 20.2W (Tc) 850mW (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
PMV65XP/MIR
PMV65XP/MIR
Nexperia USA Inc.
MOSFET P-CH 20V 2.8A TO236AB
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP81101MNTXG
NCP81101MNTXG
onsemi
IC REG BUCK CTLR 1PH 28QFN
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5