NTTFS4937NTAG
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onsemi NTTFS4937NTAG

Manufacturer No:
NTTFS4937NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 11A/75A 8WDFN
Delivery:
Payment:
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Product Introduction

Overview

The NTTFS4937NTAG is a power MOSFET from ON Semiconductor, designed for high-performance applications. This N-Channel MOSFET is packaged in a WDFN8 (μ8FL) package and is known for its low on-resistance (RDS(on)), low capacitance, and optimized gate charge, which minimize conduction, driver, and switching losses. The device is Pb-free, halogen-free, BFR-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TA = 25°C) ID 17 A
Continuous Drain Current (TA = 85°C) ID 12 A
Power Dissipation (TA = 25°C) PD 2.24 W
Junction-to-Case Thermal Resistance RθJC 2.9 °C/W
Junction-to-Ambient Thermal Resistance (Steady State) RθJA 55.9 °C/W
Turn-On Delay Time td(on) 9.8 ns
Rise Time tr 19.8 ns
Turn-Off Delay Time td(off) 28.8 ns
Fall Time tf 4 ns
Forward Diode Voltage VSD 0.97 V
Reverse Recovery Time tRR 15.3 ns

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, BFR-free, and RoHS compliant
  • High current handling capability up to 75 A
  • Low thermal resistance for efficient heat dissipation

Applications

  • Low-side DC-DC converters
  • Power load switches
  • Notebook battery management
  • Motor control

Q & A

  1. What is the maximum drain-to-source voltage of the NTTFS4937NTAG MOSFET?

    The maximum drain-to-source voltage (VDSS) is 30 V.

  2. What is the continuous drain current rating at 25°C and 85°C?

    The continuous drain current (ID) is 17 A at 25°C and 12 A at 85°C.

  3. What are the key features of the NTTFS4937NTAG MOSFET?

    The key features include low RDS(on), low capacitance, optimized gate charge, and RoHS compliance.

  4. What are the typical applications of the NTTFS4937NTAG MOSFET?

    Typical applications include low-side DC-DC converters, power load switches, notebook battery management, and motor control.

  5. What is the junction-to-case thermal resistance of the NTTFS4937NTAG?

    The junction-to-case thermal resistance (RθJC) is 2.9 °C/W.

  6. What is the turn-on delay time and rise time of the NTTFS4937NTAG?

    The turn-on delay time (td(on)) is 9.8 ns, and the rise time (tr) is 19.8 ns.

  7. Is the NTTFS4937NTAG MOSFET environmentally friendly?
  8. What is the maximum power dissipation of the NTTFS4937NTAG at 25°C?

    The maximum power dissipation (PD) at 25°C is 2.24 W.

  9. What is the forward diode voltage of the NTTFS4937NTAG?

    The forward diode voltage (VSD) is 0.97 V at TJ = 25°C.

  10. What is the reverse recovery time of the NTTFS4937NTAG?

    The reverse recovery time (tRR) is 15.3 ns.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2540 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):860mW (Ta), 43.1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS4937NTWG
NTTFS4937NTWG
MOSFET N-CH 30V 11A/75A 8WDFN

Similar Products

Part Number NTTFS4937NTAG NTTFS4937NTWG NTTFS4939NTAG NTTFS4930NTAG NTTFS4932NTAG
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 75A (Tc) 11A (Ta), 75A (Tc) 8.9A (Ta), 52A (Tc) 4.5A (Ta), 23A (Tc) 11A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 10V 4.5mOhm @ 20A, 10V 5.5mOhm @ 20A, 10V 23mOhm @ 6A, 10V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.5 nC @ 10 V 35.5 nC @ 10 V 28 nC @ 10 V 5.5 nC @ 4.5 V 46.5 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 15 V 2540 pF @ 15 V 1979 pF @ 15 V 476 pF @ 15 V 3111 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 860mW (Ta), 43.1W (Tc) 860mW (Ta), 43.1W (Tc) 850mW (Ta), 29.8W (Tc) 790mW (Ta), 20.2W (Tc) 850mW (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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