Overview
The NTR4101PT1G is a 20 V P-Channel Trench Power MOSFET produced by onsemi. This device is designed for low voltage gate drive and features a small footprint SOT-23 package. It is AEC-Q101 qualified, making it suitable for automotive and other applications requiring unique site and control change requirements. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | -2.4 | A |
| Continuous Drain Current (TA = 85°C) | ID | -1.7 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | -18 | A |
| Power Dissipation (TA = 25°C) | PD | 0.73 | W |
| Power Dissipation (t ≤ 10 s) | PD | 1.25 | W |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1.2 | V |
| Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -1.6 A) | RDS(on) | 70 mΩ | |
| Drain-to-Source On-Resistance (VGS = -2.5 V, ID = -1.3 A) | RDS(on) | 90 mΩ | |
| Drain-to-Source On-Resistance (VGS = -1.8 V, ID = -0.9 A) | RDS(on) | 112 mΩ | |
| Maximum Junction Temperature | TJ | 150 | °C |
| Lead Temperature for Soldering | TL | 260 | °C |
Key Features
- Leading -20 V Trench technology for low RDS(on)
- -1.8 V rated for low voltage gate drive
- SOT-23 surface mount package for small footprint
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free, and RoHS compliant
- Low thermal resistance
- High ESD capability (HBM Class 0, 225 V)
Applications
- Load/Power Management for Portables
- Load/Power Management for Computing
- Charging Circuits and Battery Protection
Q & A
- What is the maximum drain-to-source voltage of the NTR4101PT1G MOSFET?
The maximum drain-to-source voltage is -20 V. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is -2.4 A. - What is the typical drain-to-source on-resistance at VGS = -4.5 V and ID = -1.6 A?
The typical drain-to-source on-resistance is 70 mΩ. - Is the NTR4101PT1G MOSFET RoHS compliant?
Yes, the NTR4101PT1G MOSFET is Pb-free, halogen-free, and RoHS compliant. - What are the typical applications of the NTR4101PT1G MOSFET?
The typical applications include load/power management for portables, load/power management for computing, and charging circuits and battery protection. - What is the maximum junction temperature of the NTR4101PT1G MOSFET?
The maximum junction temperature is 150°C. - What is the package type of the NTR4101PT1G MOSFET?
The package type is SOT-23. - Is the NTR4101PT1G MOSFET suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications. - What is the ESD capability of the NTR4101PT1G MOSFET?
The ESD capability is HBM Class 0, 225 V. - What is the lead temperature for soldering the NTR4101PT1G MOSFET?
The lead temperature for soldering is 260°C.
