NTR4101PT1H
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onsemi NTR4101PT1H

Manufacturer No:
NTR4101PT1H
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.8A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4101PT1H, produced by onsemi, is a single P-Channel Trench MOSFET designed for low voltage applications. This device is packaged in a SOT-23 surface mount format, offering a small footprint suitable for various electronic designs. It is AEC-Q101 qualified and PPAP capable, making it reliable for automotive and other demanding applications. The MOSFET is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20V
Gate-to-Source VoltageVGS±8.0V
Continuous Drain Current (TA = 25°C)ID-2.4A
Continuous Drain Current (TA = 85°C)ID-1.7A
Pulsed Drain Current (tp = 10 μs)IDM-18A
Power Dissipation (TA = 25°C)PD0.73W
Operating Junction and Storage TemperatureTJ, TSTG-55 to 150°C
Drain-to-Source On-Resistance (VGS = -4.5 V, ID = -1.6 A)RDS(on)70
Gate Threshold VoltageVGS(th)-0.4 to -1.2V
ESD CapabilityESD225V

Key Features

  • Leading -20 V Trench technology for low RDS(on)
  • -1.8 V rated for low voltage gate drive
  • SOT-23 surface mount package for small footprint
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications
  • Pb-free, halogen-free, and RoHS compliant
  • High ESD capability of 225 V
  • Low on-resistance and high current handling capabilities

Applications

  • Load and power management for portable devices
  • Load and power management for computing systems
  • Charging circuits and battery protection
  • Automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-to-source voltage of the NTR4101PT1H? The maximum drain-to-source voltage is -20 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is -2.4 A.
  3. What is the typical on-resistance at VGS = -4.5 V and ID = -1.6 A? The typical on-resistance is 70 mΩ.
  4. Is the NTR4101PT1H RoHS compliant? Yes, the NTR4101PT1H is RoHS compliant.
  5. What is the operating junction and storage temperature range? The operating junction and storage temperature range is -55 to 150°C.
  6. What are the typical applications of the NTR4101PT1H? Typical applications include load and power management for portable devices, computing systems, charging circuits, and battery protection.
  7. Is the NTR4101PT1H suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
  8. What is the ESD capability of the NTR4101PT1H? The ESD capability is 225 V.
  9. What package type is used for the NTR4101PT1H? The NTR4101PT1H is packaged in a SOT-23 surface mount format.
  10. What are the key benefits of using the NTR4101PT1H? Key benefits include low on-resistance, high current handling, and compliance with environmental standards.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.5 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:675 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):420mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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In Stock

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Same Series
NTR4101PT1G
NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
NTR4101PT1H
NTR4101PT1H
MOSFET P-CH 20V 1.8A SOT23-3

Similar Products

Part Number NTR4101PT1H NTS4101PT1H NTR4101PT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel - P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V - 20 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) - 1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V - 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 1.6A, 4.5V - 85mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA - 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V - 8.5 nC @ 4.5 V
Vgs (Max) ±8V - ±8V
Input Capacitance (Ciss) (Max) @ Vds 675 pF @ 10 V - 675 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 420mW (Ta) - 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount
Supplier Device Package SOT-23-3 (TO-236) - SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3

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