Overview
The NTRV4101PT1G is a single P-Channel Trench MOSFET produced by onsemi. This device is designed for low voltage gate drive and features a low on-resistance (RDS(on)) of 90 mΩ at -2.5 V and 112 mΩ at -1.8 V. It is packaged in a SOT-23 case, which provides a small footprint suitable for various applications. The NTRV4101PT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is Pb-free, halogen-free, and RoHS compliant.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | -2.4 | A |
| Continuous Drain Current (TA = 85°C) | ID | -1.7 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | -18 | A |
| Power Dissipation (TA = 25°C) | PD | 0.73 | W |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Drain-to-Source On-Resistance (VGS = -2.5 V, ID = -1.3 A) | RDS(on) | 90 | mΩ |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1.2 | V |
| Input Capacitance | Ciss | 675 | pF |
| Output Capacitance | Coss | 100 | pF |
| Reverse Transfer Capacitance | Crss | 75 | pF |
Key Features
- Leading -20 V Trench technology for low RDS(on)
- -1.8 V rated for low voltage gate drive
- SOT-23 surface mount package for small footprint
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Pb-free, halogen-free, and RoHS compliant
- High ESD capability (HBM Class 0, 225 V)
- Low on-resistance and high current handling capabilities
Applications
- Load/Power Management for Portables
- Load/Power Management for Computing
- Charging Circuits and Battery Protection
- Automotive systems requiring AEC-Q101 qualification
- Other applications requiring low voltage gate drive and high efficiency
Q & A
- What is the maximum drain-to-source voltage for the NTRV4101PT1G?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What is the typical on-resistance of the NTRV4101PT1G at -2.5 V gate voltage?
The typical on-resistance (RDS(on)) at -2.5 V gate voltage is 90 mΩ.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is -2.4 A.
- Is the NTRV4101PT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- What is the package type of the NTRV4101PT1G?
The device is packaged in a SOT-23 case.
- Is the NTRV4101PT1G RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What is the operating junction temperature range for the NTRV4101PT1G?
The operating junction temperature range is -55 to 150°C.
- What are some common applications of the NTRV4101PT1G?
Common applications include load/power management for portables and computing, charging circuits, and battery protection.
- What is the ESD capability of the NTRV4101PT1G?
The device has an ESD capability of 225 V (HBM Class 0).
- How does the on-resistance vary with temperature?
The on-resistance (RDS(on)) varies with temperature as shown in the typical performance curves in the datasheet.
