NTS4101PT1G
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onsemi NTS4101PT1G

Manufacturer No:
NTS4101PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.37A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTS4101PT1G is a P-Channel power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling capabilities. The NTS4101PT1G is packaged in a compact SC-70-3 (SOT323) surface mount package, making it suitable for space-constrained designs. It is particularly useful in power management and switching applications due to its robust electrical characteristics and thermal performance.

Key Specifications

ParameterValue
Channel ModeEnhancement
P-Channel Voltage Rating20 V
Maximum Continuous Drain Current1.37 A (Ta)
Maximum Power Dissipation329 mW (Ta)
Maximum Operating Temperature+150°C
PackagingSC-70-3 (SOT323)

Key Features

  • Low on-resistance for efficient power handling
  • High current capability of up to 1.37 A
  • Compact SC-70-3 (SOT323) package for space-saving designs
  • Pb-Free indicator for compliance with environmental regulations
  • High maximum operating temperature of +150°C for robust thermal performance

Applications

The NTS4101PT1G is suitable for a variety of applications, including:

  • Power management and switching circuits
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial electronics
  • Portable electronics and battery management systems

Q & A

  1. What is the maximum voltage rating of the NTS4101PT1G?
    The maximum voltage rating is 20 V.
  2. What is the maximum continuous drain current of the NTS4101PT1G?
    The maximum continuous drain current is 1.37 A (Ta).
  3. What is the maximum power dissipation of the NTS4101PT1G?
    The maximum power dissipation is 329 mW (Ta).
  4. What is the packaging type of the NTS4101PT1G?
    The packaging type is SC-70-3 (SOT323).
  5. What is the maximum operating temperature of the NTS4101PT1G?
    The maximum operating temperature is +150°C.
  6. Is the NTS4101PT1G Pb-Free?
    Yes, the NTS4101PT1G is Pb-Free.
  7. What are some common applications for the NTS4101PT1G?
    Common applications include power management, DC-DC converters, motor control, automotive electronics, and portable electronics.
  8. Where can I find detailed specifications for the NTS4101PT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  9. How do I ensure proper thermal management for the NTS4101PT1G?
    Proper thermal management can be achieved by following the guidelines in the datasheet and ensuring adequate heat sinking and cooling in the application.
  10. Can the NTS4101PT1G be used in high-temperature environments?
    Yes, the NTS4101PT1G can operate in high-temperature environments up to +150°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.37A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:840 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):329mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
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Same Series
NTS4101PT1
NTS4101PT1
MOSFET P-CH 20V 1.37A SC70-3

Similar Products

Part Number NTS4101PT1G NTS4101PT1H NTR4101PT1G NTS2101PT1G NTS4101PT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
FET Type P-Channel - P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V - 20 V 8 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.37A (Ta) - 1.8A (Ta) 1.4A (Ta) 1.37A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V - 1.8V, 4.5V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4.5V - 85mOhm @ 1.6A, 4.5V 100mOhm @ 1A, 4.5V 120mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA - 1.2V @ 250µA 1V @ 250µA 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V - 8.5 nC @ 4.5 V 6.4 nC @ 5 V 9 nC @ 4.5 V
Vgs (Max) ±8V - ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 20 V - 675 pF @ 10 V 640 pF @ 8 V 840 pF @ 20 V
FET Feature - - - - -
Power Dissipation (Max) 329mW (Ta) - 420mW (Ta) 290mW (Ta) 329mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-70-3 (SOT323) - SOT-23-3 (TO-236) SC-70-3 (SOT323) SC-70-3 (SOT323)
Package / Case SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323

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