NTS2101PT1G
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onsemi NTS2101PT1G

Manufacturer No:
NTS2101PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 8V 1.4A SC70-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTS2101PT1G is a P-channel MOSFET produced by onsemi, designed for a variety of applications requiring low on-resistance and high current handling. This device is packaged in the SOT-323 (SC-70) package, making it suitable for space-constrained designs. The NTS2101PT1G is known for its high performance and reliability, making it a popular choice in modern electronic systems.

Key Specifications

ParameterValue
Channel TypeP Channel
Drain-Source Voltage (Vds)-8V
Continuous Drain Current (Id)1.4A
On-Resistance (Rds(on))117mΩ @ Vgs = 1.8V, Id = 0.3A
PackageSOT-323 (SC-70)
Power Dissipation (Pd)290mW
Threshold Voltage (Vth)450mV
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) of 117mΩ at Vgs = 1.8V and Id = 0.3A, ensuring minimal power loss.
  • High continuous drain current of 1.4A, suitable for applications requiring significant current handling.
  • Compact SOT-323 (SC-70) package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 150°C, enhancing reliability in various environments.
  • RoHS compliant, ensuring environmental sustainability.

Applications

  • Power management in portable electronics such as smartphones, tablets, and laptops.
  • DC-DC converters and switching regulators.
  • Audio amplifiers and other audio equipment.
  • Automotive systems, including infotainment and driver assistance systems.
  • Industrial control systems and automation.

Q & A

  1. What is the channel type of the NTS2101PT1G MOSFET?
    The NTS2101PT1G is a P-channel MOSFET.
  2. What is the maximum drain-source voltage (Vds) of the NTS2101PT1G?
    The maximum drain-source voltage (Vds) is -8V.
  3. What is the continuous drain current (Id) of the NTS2101PT1G?
    The continuous drain current (Id) is 1.4A.
  4. What is the on-resistance (Rds(on)) of the NTS2101PT1G?
    The on-resistance (Rds(on)) is 117mΩ at Vgs = 1.8V and Id = 0.3A.
  5. In what package is the NTS2101PT1G available?
    The NTS2101PT1G is available in the SOT-323 (SC-70) package.
  6. What is the power dissipation (Pd) of the NTS2101PT1G?
    The power dissipation (Pd) is 290mW.
  7. What is the threshold voltage (Vth) of the NTS2101PT1G?
    The threshold voltage (Vth) is 450mV.
  8. What is the operating temperature range of the NTS2101PT1G?
    The operating temperature range is from -55°C to 150°C.
  9. Is the NTS2101PT1G RoHS compliant?
    Yes, the NTS2101PT1G is RoHS compliant.
  10. What are some common applications of the NTS2101PT1G?
    Common applications include power management in portable electronics, DC-DC converters, audio amplifiers, automotive systems, and industrial control systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 8 V
FET Feature:- 
Power Dissipation (Max):290mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-70-3 (SOT323)
Package / Case:SC-70, SOT-323
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Same Series
NTS2101PT1
NTS2101PT1
MOSFET P-CH 8V 1.4A SC70-3

Similar Products

Part Number NTS2101PT1G NTS4101PT1G NTR2101PT1G NTS2101PT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V 20 V 8 V 8 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Ta) 1.37A (Ta) 3.7A (Ta) 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 100mOhm @ 1A, 4.5V 120mOhm @ 1A, 4.5V 52mOhm @ 3.5A, 4.5V 100mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.4 nC @ 5 V 9 nC @ 4.5 V 15 nC @ 4.5 V 6.4 nC @ 5 V
Vgs (Max) ±8V ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 8 V 840 pF @ 20 V 1173 pF @ 4 V 640 pF @ 8 V
FET Feature - - - -
Power Dissipation (Max) 290mW (Ta) 329mW (Ta) 960mW (Ta) 290mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-70-3 (SOT323)
Package / Case SC-70, SOT-323 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323

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