Overview
The NTR2101PT1G is a single P-Channel, small signal MOSFET produced by onsemi. This device is designed with leading trench technology to achieve low drain-to-source on resistance (RDS(on)). It is packaged in a SOT-23 surface mount case, providing a small footprint of 3 x 3 mm. The NTR2101PT1G is Pb-free, making it environmentally friendly. It is suitable for various applications requiring low voltage gate drive and high performance in compact designs.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -8.0 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current (TA = 25°C) | ID | -3.7 | A |
| Power Dissipation (t ≤ 5 s, TA = 25°C) | PD | 0.96 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | -11 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Drain-to-Source On Resistance (VGS = -4.5 V, ID = -3.5 A) | RDS(on) | 39 - 52 | mΩ |
| Gate Threshold Voltage (VGS(TH)) | VGS(TH) | -0.40 to -1.0 | V |
Key Features
- Leading trench technology for low RDS(on)
- -1.8 V rated for low voltage gate drive
- SOT-23 surface mount package for small footprint (3 x 3 mm)
- Pb-free device
- High performance in compact designs
- Low drain-to-source on resistance
- High continuous drain current capability
Applications
- High side load switch
- DC-DC conversion
- Cell phones
- Notebooks
- PDAs and other portable electronic devices
Q & A
- What is the maximum drain-to-source voltage of the NTR2101PT1G?
The maximum drain-to-source voltage (VDSS) is -8.0 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is -3.7 A.
- What is the power dissipation limit for the device?
The power dissipation (PD) limit for t ≤ 5 s at TA = 25°C is 0.96 W.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to 150°C.
- What is the typical drain-to-source on resistance at VGS = -4.5 V and ID = -3.5 A?
The typical drain-to-source on resistance (RDS(on)) is 39 - 52 mΩ.
- Is the NTR2101PT1G Pb-free?
- What package type is used for the NTR2101PT1G?
The device is packaged in a SOT-23 surface mount case.
- What are some common applications for the NTR2101PT1G?
Common applications include high side load switch, DC-DC conversion, cell phones, notebooks, and PDAs.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is -0.40 to -1.0 V.
- What is the maximum pulsed drain current rating?
The maximum pulsed drain current (IDM) for tp = 10 μs is -11 A.
