Overview
The NTR4171PT1G is a single P-Channel power MOSFET produced by onsemi, packaged in the SOT-23 case. This device is designed for high power and current handling capabilities, making it suitable for various applications in portable electronics. It features low RDS(on) at low gate voltage and a low threshold voltage, enhancing its performance in load switching and battery management.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V |
| Gate-to-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current (TA = 25°C) | ID | -2.2 | A |
| Continuous Drain Current (TA = 85°C) | ID | -1.5 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | -15.0 | A |
| Power Dissipation (Steady State, TA = 25°C) | PD | 0.48 | W |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 to 150 | °C |
| Source Current (Body Diode) | IS | -1.0 | A |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Drain-to-Source On-Resistance (VGS = -10 V, ID = -2.2 A) | RDS(on) | 50-75 | mΩ |
| Gate Threshold Voltage | VGS(TH) | -0.7 to -1.4 | V |
Key Features
- Low RDS(on) at low gate voltage, enhancing performance in load switching and battery management.
- Low threshold voltage for efficient operation.
- High power and current handling capability.
- Pb-Free device, compliant with environmental regulations.
- Compact SOT-23 package, suitable for space-constrained applications.
- High thermal resistance and robust thermal characteristics.
- Fast switching times and low gate resistance.
Applications
- Load switching in portable electronics.
- Battery and load management in cell phones, PDAs, media players, and other portable devices.
- General-purpose power switching applications requiring low on-resistance and high current handling.
Q & A
- What is the maximum drain-to-source voltage of the NTR4171PT1G?
The maximum drain-to-source voltage (VDSS) is -30 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is -2.2 A at 25°C and -1.5 A at 85°C.
- What is the power dissipation limit for the NTR4171PT1G?
The power dissipation limit is 0.48 W at steady state and 1.25 W for pulses less than 5 seconds.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55°C to 150°C.
- What is the typical on-resistance at VGS = -10 V and ID = -2.2 A?
The typical on-resistance (RDS(on)) is 50-75 mΩ.
- What are the common applications of the NTR4171PT1G?
Common applications include load switching and battery management in portable electronics like cell phones, PDAs, and media players.
- Is the NTR4171PT1G Pb-Free?
- What is the package type of the NTR4171PT1G?
The package type is SOT-23.
- What are the key features of the NTR4171PT1G?
Key features include low RDS(on) at low gate voltage, low threshold voltage, high power and current handling capability, and Pb-Free compliance.
- What is the gate threshold voltage range of the NTR4171PT1G?
The gate threshold voltage (VGS(TH)) range is -0.7 to -1.4 V.
