NTR4171PT3G
  • Share:

onsemi NTR4171PT3G

Manufacturer No:
NTR4171PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4171PT3G is a single P-Channel Power MOSFET produced by onsemi. This device is optimized for load switch applications and is particularly suited for battery and load management in portable equipment such as cell phones, PDAs, and media players. It features a low on-resistance (RDS(on)) at low gate voltage, making it efficient for power handling in compact designs.

Key Specifications

Parameter Value Unit
Channel Polarity P-Channel
VDS (Max) -30 V
ID (Max) -3.5 A
RDS(on) Max @ VGS = 10 V 75
VGS (Max) -20 V
VGS(th) (Max) -2.2 V
PD (Max) 480 mW
Package Type SOT-23 (TO-236)
Operating Temperature Range -55 to 150 °C

Key Features

  • Low on-resistance (RDS(on)) at low gate voltage, enhancing power efficiency.
  • High power and current handling capability.
  • Low threshold voltage (VGS(th)) for easy switching.
  • Compact SOT-23 package, ideal for space-constrained designs.
  • Optimized for load switch applications in portable equipment.

Applications

  • Battery and load management in portable equipment.
  • Cell phones and other mobile devices.
  • PDAs and media players.
  • General-purpose load switching in low-power applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTR4171PT3G?

    The maximum drain-source voltage (VDS) is -30 V.

  2. What is the maximum drain current (ID) of the NTR4171PT3G?

    The maximum drain current (ID) is -3.5 A.

  3. What is the on-resistance (RDS(on)) of the NTR4171PT3G at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 75 mΩ.

  4. What is the package type of the NTR4171PT3G?

    The package type is SOT-23 (TO-236).

  5. What are the typical applications of the NTR4171PT3G?

    The NTR4171PT3G is typically used in battery and load management in portable equipment such as cell phones, PDAs, and media players.

  6. What is the maximum gate-source voltage (VGS) of the NTR4171PT3G?

    The maximum gate-source voltage (VGS) is -20 V.

  7. What is the threshold voltage (VGS(th)) of the NTR4171PT3G?

    The threshold voltage (VGS(th)) is -2.2 V.

  8. What is the maximum power dissipation (PD) of the NTR4171PT3G?

    The maximum power dissipation (PD) is 480 mW.

  9. Is the NTR4171PT3G available in a lead-free package?
  10. What is the operating temperature range of the NTR4171PT3G?

    The operating temperature range is -55 to 150°C).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.6 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
137

Please send RFQ , we will respond immediately.

Same Series
NTR4171PT3G
NTR4171PT3G
MOSFET P-CH 30V 2.2A SOT23-3

Similar Products

Part Number NTR4171PT3G NTR4171PT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 2.2A, 10V 75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.6 nC @ 10 V 15.6 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 15 V 720 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
FDB38N30U
FDB38N30U
onsemi
MOSFET N CH 300V 38A D2PAK
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NVF2955T1G
NVF2955T1G
onsemi
MOSFET P-CH 60V 2.6A SOT223
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
LC709203FXE-01MH
LC709203FXE-01MH
onsemi
IC BATT MON LI-ION 1CELL 9WLCSP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC