NTR4171PT3G
  • Share:

onsemi NTR4171PT3G

Manufacturer No:
NTR4171PT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 2.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTR4171PT3G is a single P-Channel Power MOSFET produced by onsemi. This device is optimized for load switch applications and is particularly suited for battery and load management in portable equipment such as cell phones, PDAs, and media players. It features a low on-resistance (RDS(on)) at low gate voltage, making it efficient for power handling in compact designs.

Key Specifications

Parameter Value Unit
Channel Polarity P-Channel
VDS (Max) -30 V
ID (Max) -3.5 A
RDS(on) Max @ VGS = 10 V 75
VGS (Max) -20 V
VGS(th) (Max) -2.2 V
PD (Max) 480 mW
Package Type SOT-23 (TO-236)
Operating Temperature Range -55 to 150 °C

Key Features

  • Low on-resistance (RDS(on)) at low gate voltage, enhancing power efficiency.
  • High power and current handling capability.
  • Low threshold voltage (VGS(th)) for easy switching.
  • Compact SOT-23 package, ideal for space-constrained designs.
  • Optimized for load switch applications in portable equipment.

Applications

  • Battery and load management in portable equipment.
  • Cell phones and other mobile devices.
  • PDAs and media players.
  • General-purpose load switching in low-power applications.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTR4171PT3G?

    The maximum drain-source voltage (VDS) is -30 V.

  2. What is the maximum drain current (ID) of the NTR4171PT3G?

    The maximum drain current (ID) is -3.5 A.

  3. What is the on-resistance (RDS(on)) of the NTR4171PT3G at VGS = 10 V?

    The on-resistance (RDS(on)) at VGS = 10 V is 75 mΩ.

  4. What is the package type of the NTR4171PT3G?

    The package type is SOT-23 (TO-236).

  5. What are the typical applications of the NTR4171PT3G?

    The NTR4171PT3G is typically used in battery and load management in portable equipment such as cell phones, PDAs, and media players.

  6. What is the maximum gate-source voltage (VGS) of the NTR4171PT3G?

    The maximum gate-source voltage (VGS) is -20 V.

  7. What is the threshold voltage (VGS(th)) of the NTR4171PT3G?

    The threshold voltage (VGS(th)) is -2.2 V.

  8. What is the maximum power dissipation (PD) of the NTR4171PT3G?

    The maximum power dissipation (PD) is 480 mW.

  9. Is the NTR4171PT3G available in a lead-free package?
  10. What is the operating temperature range of the NTR4171PT3G?

    The operating temperature range is -55 to 150°C).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
Rds On (Max) @ Id, Vgs:75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.6 nC @ 10 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):480mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

-
137

Please send RFQ , we will respond immediately.

Same Series
NTR4171PT3G
NTR4171PT3G
MOSFET P-CH 30V 2.2A SOT23-3

Similar Products

Part Number NTR4171PT3G NTR4171PT1G
Manufacturer onsemi onsemi
Product Status Obsolete Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V 2.5V, 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 2.2A, 10V 75mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.6 nC @ 10 V 15.6 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 15 V 720 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 480mW (Ta) 480mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
CSD17484F4
CSD17484F4
Texas Instruments
MOSFET N-CH 30V 3A 3PICOSTAR
AO3400-5.8A
AO3400-5.8A
MDD
MOSFET SOT-23 N Channel 30V
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STW20N95K5
STW20N95K5
STMicroelectronics
MOSFET N-CH 950V 17.5A TO247-3
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB