NTJS4151PT1G
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onsemi NTJS4151PT1G

Manufacturer No:
NTJS4151PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.3A SC88/SC70-6
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTJS4151PT1G is a single P-Channel Trench Power MOSFET manufactured by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in the SC-88 (SOT-363) package, which is lead-free and suitable for various power management and switching applications.

Key Specifications

ParameterValue
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage20 V
Id - Continuous Drain Current3.3 A
Package TypeSC-88 (SOT-363)
Lead-FreeYes

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High continuous drain current of 3.3 A
  • Drain-source breakdown voltage of 20 V
  • Compact SC-88 (SOT-363) package for space-saving designs
  • Lead-free and RoHS compliant

Applications

The NTJS4151PT1G is suitable for a variety of applications, including:

  • Power management in consumer electronics
  • DC-DC converters and power supplies
  • Motor control and drive systems
  • Automotive and industrial power systems
  • General-purpose switching and amplification

Q & A

  1. What is the transistor polarity of the NTJS4151PT1G?
    The transistor polarity is P-Channel.
  2. What is the maximum continuous drain current of the NTJS4151PT1G?
    The maximum continuous drain current is 3.3 A.
  3. What is the drain-source breakdown voltage of the NTJS4151PT1G?
    The drain-source breakdown voltage is 20 V.
  4. What package type is the NTJS4151PT1G available in?
    The NTJS4151PT1G is available in the SC-88 (SOT-363) package.
  5. Is the NTJS4151PT1G lead-free?
    Yes, the NTJS4151PT1G is lead-free and RoHS compliant.
  6. What are some common applications for the NTJS4151PT1G?
    Common applications include power management in consumer electronics, DC-DC converters, motor control, automotive and industrial power systems, and general-purpose switching and amplification.
  7. Where can I find detailed specifications for the NTJS4151PT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  8. What is the significance of the 'Trench Power MOSFET' designation?
    The 'Trench Power MOSFET' designation indicates that the device uses trench technology, which enhances its performance by reducing on-resistance and improving current handling.
  9. How many channels does the NTJS4151PT1G have?
    The NTJS4151PT1G has 1 channel.
  10. Is the NTJS4151PT1G suitable for high-power applications?
    Yes, the NTJS4151PT1G is designed for high-performance and high-power applications due to its low on-resistance and high current handling capabilities.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-88/SC70-6/SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
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Similar Products

Part Number NTJS4151PT1G NTJS3151PT1G NTJS4151PT1
Manufacturer onsemi onsemi onsemi
Product Status Active Active Obsolete
FET Type P-Channel P-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 20 V 12 V -
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta) 2.7A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V -
Rds On (Max) @ Id, Vgs 60mOhm @ 3.3A, 4.5V 60mOhm @ 3.3A, 4.5V -
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 100µA -
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 8.6 nC @ 4.5 V -
Vgs (Max) ±12V ±12V -
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 10 V 850 pF @ 12 V -
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 625mW (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount -
Supplier Device Package SC-88/SC70-6/SOT-363 SC-88/SC70-6/SOT-363 -
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 -

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