Overview
The NTJS3151PT1G is a P-channel MOSFET manufactured by ON Semiconductor. This device is part of the company's trench technology series, designed to offer low on-state resistance (RDS(ON)) and extended battery life. The MOSFET is packaged in a small outline SC-88 (SOT-363) package, making it suitable for space-constrained applications. It features gate diodes for ESD protection and is RoHS compliant, Pb-free, and halogen-free/BFR-free. The NTJS3151PT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 12 | V |
| Gate-to-Source Voltage | VGS | ±12 | V |
| Maximum Drain Current | ID | 3.3 | A |
| Maximum Junction Temperature | TJ | 150 | °C |
| Gate Threshold Voltage | VGS(TH) | 0.40 - 1.2 | V |
| Drain-to-Source On-State Resistance | RDS(ON) | 45 - 60 mΩ (VGS = -4.5 V, ID = -3.3 A) | mΩ |
| Total Gate Charge | QG(TOT) | 8.6 nC | nC |
| Input Capacitance | CISS | 850 pF | pF |
| Output Capacitance | COSS | 170 pF | pF |
| Reverse Transfer Capacitance | CRSS | 110 pF | pF |
Key Features
- Leading Trench Technology for low RDS(ON), extending battery life.
- SC-88 small outline package (2x2 mm, SC70-6 equivalent), ideal for space-constrained applications.
- Gate diodes for ESD protection.
- NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- High side load switch.
- Cell phones.
- Computing devices.
- Digital cameras.
- MP3 players and PDAs.
Q & A
- What is the maximum drain-to-source voltage of the NTJS3151PT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 12 V.
- What is the maximum gate-to-source voltage of the NTJS3151PT1G MOSFET?
The maximum gate-to-source voltage (VGS) is ±12 V.
- What is the maximum drain current of the NTJS3151PT1G MOSFET?
The maximum drain current (ID) is 3.3 A.
- What is the package type of the NTJS3151PT1G MOSFET?
The package type is SC-88 (SOT-363).
- Is the NTJS3151PT1G MOSFET RoHS compliant?
Yes, the NTJS3151PT1G is RoHS compliant, Pb-free, and halogen-free/BFR-free.
- What are the typical applications of the NTJS3151PT1G MOSFET?
Typical applications include high side load switches, cell phones, computing devices, digital cameras, MP3 players, and PDAs.
- What is the gate threshold voltage range of the NTJS3151PT1G MOSFET?
The gate threshold voltage (VGS(TH)) range is 0.40 to 1.2 V.
- What is the total gate charge of the NTJS3151PT1G MOSFET?
The total gate charge (QG(TOT)) is 8.6 nC.
- Is the NTJS3151PT1G MOSFET suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the maximum junction temperature of the NTJS3151PT1G MOSFET?
The maximum junction temperature (TJ) is 150 °C.
