Overview
The NTJS3151PT2G is a power, single, P-channel, trench MOSFET produced by ON Semiconductor. This device is designed with leading trench technology to achieve low RDS(ON), which helps in extending battery life in various applications. It is packaged in a small outline SC-88 (SOT-363) case, making it suitable for space-constrained designs. The NV prefix indicates that this device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -12 | V |
| Gate-to-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current (Steady State, TA = 25°C) | ID | -2.7 | A |
| Pulsed Drain Current (tp = 10 μs) | IDM | -8.0 | A |
| Power Dissipation (Steady State, TA = 25°C) | PD | 0.625 | W |
| Operating Junction and Storage Temperature | TJ, TSTG | -55 to 150 | °C |
| Source Current (Body Diode) | IS | -0.8 | A |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 200 | °C/W |
| Drain-to-Source On Resistance (VGS = -4.5 V, ID = -3.3 A) | RDS(ON) | 45-60 | mΩ |
Key Features
- Leading Trench Technology for low RDS(ON), extending battery life.
- SC-88 small outline package (2x2 mm, SC70-6 equivalent), ideal for space-constrained designs.
- Gate diodes for ESD protection.
- NV prefix indicating AEC-Q101 qualification and PPAP capability, suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- High side load switch.
- Cell phones.
- Computing devices.
- Digital cameras.
- MP3s and PDAs.
Q & A
- What is the maximum drain-to-source voltage for the NTJS3151PT2G?
The maximum drain-to-source voltage (VDSS) is -12 V.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) is -2.7 A at 25°C.
- What is the thermal resistance from junction to ambient?
The junction-to-ambient thermal resistance (RθJA) is 200 °C/W.
- Is the NTJS3151PT2G RoHS compliant?
- What are the typical applications for this MOSFET?
Typical applications include high side load switches, cell phones, computing devices, digital cameras, MP3s, and PDAs.
- What is the gate-to-source voltage range?
The gate-to-source voltage (VGS) range is ±12 V.
- What is the maximum power dissipation at 25°C?
The maximum power dissipation (PD) is 0.625 W at 25°C.
- What is the operating junction temperature range?
The operating junction temperature range is -55 to 150°C.
- Does the NTJS3151PT2G have ESD protection?
- What is the package type of the NTJS3151PT2G?
The package type is SC-88 (SOT-363), which is a small outline package.
